Multi-time programmable memory
View Patent ↗Multi-time programmable memory elements are disclosed. The disclosed memory elements extend the capability of fuse elements, anti-fuse elements, and combinations thereof to enable multi-time programmability. The disclosed memory elements significantly reduce area requirements and control circuitry complexity of memory elements. The disclosed memory elements can be used in non-volatile memory storage, and are suitable for use in system on chip (SoC) products.
1. A memory element, comprising:
a first terminal coupled to an N-doped region of said memory element;
a second terminal coupled to a P-doped region of said memory element, wherein said N-doped region and P-doped region provide a poly diode anti-fuse; and
a silicide layer overlaying said N-doped region and P-doped region, wherein said silicide layer provides a poly fuse in parallel with said poly diode anti-fuse in an initial programming state of said memory element,
wherein said memory element provides a first programming state, and wherein a first impedance of said memory element in said first programming state is higher than an initial impedance of said memory element in said initial programming state.
2. The memory element of claim 1 , wherein the memory element is multi-time programmable.
3. The memory element of claim 1 , wherein the memory element is at least three-time programmable.
4. The memory element of claim 1 , wherein said poly fuse provides a very low impedance in parallel with said poly diode anti-fuse in said initial programming state.
5. The memory element of claim 4 , wherein said memory element acts as a short circuit between said first terminal and said second terminal in said initial programming state.
6. The memory element of claim 1 , wherein said first programming state is achieved by applying a first current between said first terminal and said second terminal of said memory element.
7. The memory element of claim 6 , wherein said first current opens said silicide layer.
8. The memory element of claim 6 , wherein said poly diode anti-fuse provides said first impedance of said memory element in said first programming state.
9. The memory element of claim 1 , wherein said memory element provides a second programming state, wherein a second impedance of said memory element in said second programming state is lower than said first impedance of said memory element in said first programming state.
10. The memory element of claim 9 , wherein said second programming state is achieved by applying a first voltage across said first terminal and said second terminal of said memory element.
11. The memory element of claim 10 , wherein said first voltage causes said poly diode anti-fuse into a highly reverse biased state.
12. The memory element of claim 11 , wherein said poly diode anti-fuse acts as a resistive element with low impedance in said second programming state and provides said second impedance of said memory element.
13. The memory element of claim 9 , wherein said memory element provides a third programming state, wherein a third impedance of said memory element in said third programming state is higher than said second impedance of said memory element in said second programming state.
14. The memory element of claim 13 , wherein said third programming state is achieved by applying a second current between said first terminal and said second terminal of said memory element.
15. The memory element of claim 14 , wherein said second current opens a n-p junction formed by said N-doped region and P-doped region of said memory element.
16. The memory element of claim 15 , wherein said memory element acts as an open circuit between said first terminal and said second terminal in said third programming state.
17. A memory structure, comprising:
a plurality of programmable memory elements, wherein at least one memory element of said plurality of memory elements comprises:
a first terminal coupled to an N-doped region;
a second terminal coupled to a P-doped region; and
a silicide layer overlaying said N-doped region and P-doped region,
wherein in an initial programming state of the at least one memory element, the N-doped region and the P-doped region provide a poly diode anti-fuse and the silicide layer provides a poly fuse in parallel with the poly diode anti-fuse, resulting in an initial impedance of the at least one memory element, and
wherein in a first programming state of the at least one memory element, a first impedance of the at least one memory element is higher than the initial impedance of the at least one memory element.
18. The memory structure of claim 17 , wherein the memory structure requires complete re-writing only when one of said plurality of programmable memory elements has exhausted all of its available programming states.
19. The memory structure of claim 17 , wherein each of said plurality of programmable memory elements is at least three-time programmable.
20. The memory structure of claim 17 , wherein the at least one memory element is programmable independently of other memory elements of said plurality of programmable memory elements.
21. A memory element having an initial programming state and a first programming state, comprising:
an N-doped region;
a P-doped region; and
a silicide layer overlaying the N-doped region and the P-doped region,
wherein, in the initial programming state, the N-doped region and the P-doped region provide a poly diode anti-fuse, resulting in an initial impedance of the memory element, and
wherein, in the first programming state, a first impedance of the memory element is higher than the initial impedance of the memory element.
22. The memory element of claim 21 , wherein in the first programming state, the suicide layer is open.