Semiconductor light emitting device having multi-cell array and method for manufacturing the same
View Patent ↗A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.
1. A semiconductor light emitting device comprising:
a plurality of light emitting cells arranged on a conductive substrate, each light emitting cell of the plurality of light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer, wherein the second-conductivity-type semiconductor layer of each light emitting cell of the plurality of light emitting cells is electrically connected to the conductive substrate; and
a contiguous interconnection structure disposed on a to surface of the first-conductivity-type semiconductor layer of each light emitting cell and electrically connecting the first-conductivity-type semiconductor layer of one light emitting cell of the plurality of light emitting cells to the first-conductivity-type semiconductor layer of at least one other light emitting cell of the plurality of light emitting cells.
2. The semiconductor light emitting device of claim 1 , further comprising a reflective metal layer disposed between the conductive substrate and the plurality of light emitting cells.
3. The semiconductor light emitting device of claim 1 , wherein the interconnection structure is formed of a metal.
4. The semiconductor light emitting device of claim 1 , wherein a portion of the interconnection structure which is disposed on the top surface of at least the first-conductivity-type semiconductor layer of each light emitting cell is formed of a transparent conductive material.
5. The semiconductor light emitting device of claim 1 , further comprising a barrier layer disposed between the conductive substrate and the plurality of light emitting cells.
6. The semiconductor light emitting device of claim 5 , wherein the barrier layer is electrically connected to the second-conductivity-type semiconductor layer of each of the plurality of light emitting cells.
7. The semiconductor light emitting device of claim 1 , wherein the plurality of light emitting cells are electrically connected in parallel.
8. The semiconductor light emitting device of claim 1 , wherein the interconnection structure is disposed directly on the to surface of the first-conductivity-type semiconductor layer of each light emitting cell.
9. The semiconductor light emitting device of claim 8 , wherein the interconnection structure includes an electrode disposed directly on the to surface of the first-conductivity-type semiconductor layer of each light emitting cell.