IP Library Granted Patent US 8,516,669
Granted Patent B2
US 8,516,669 · App. 13/035,604 · Granted Aug 27, 2013

Method of manufacturing piezoelectric vibrating reed, piezoelectric vibrator, oscillator, electronic equipment and radio-controlled timepiece

Inventor: Takashi Minegishi (Chiba, JP)
Assignee: Seiko Instruments Inc.
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Quick Facts
Patent No.
US 8,516,669
App. No.
13/035,604
Granted
Aug 27, 2013
Kind
B2
Abstract

A method of manufacturing a piezoelectric vibrating reed from a wafer, the piezoelectric vibrating reed including a pair of vibration arm portions that is arranged in parallel, a base portion that integrally fixes proximal end sides of the pair of vibration arm portions, and groove portions which are formed on both surfaces of the pair of vibration arm portions along the longitudinal direction of the vibration arm portions, respectively, the method including a protective film forming process of forming a protective film in an area other than a position corresponding to the groove portions in the wafer; and a groove portion forming process of forming the groove portions by using the protective film as a mask to perform dry etching with respect to the wafer, wherein, in the protective film forming process, a first protective film forming process of forming the protective film of a predetermined thickness with respect to a first surface of the wafer and a second protective film forming process of forming the protective film of a predetermined thickness with respect to a second surface of the wafer are alternatively performed several times.

Claims (15)

1. A method of manufacturing a piezoelectric vibrating reed from a wafer, the piezoelectric vibrating reed including a pair of parallel vibration arm portions, a base portion that integrally fixes proximal ends of the pair of parallel vibration arm portions, and groove portions on opposite surfaces of the pair of vibration arm portions along a longitudinal direction of the vibration arm portions, respectively, the method comprising:

forming a protective film in an area other than on the groove portions; and

forming the groove portions by using the protective film as a mask and dry etching the wafer,

wherein, forming the protective film further comprises repeatedly forming a first protective film to a predetermined thickness on a first surface of the wafer and forming a second protective film to a predetermined thickness on a second surface of the wafer, the second surface opposite to the first surface, and the first and second protective films comprising substantially the same material.

2. A method of manufacturing the piezoelectric vibrating reed from a wafer, the piezoelectric vibrating reed including a pair of parallel vibration arm portions, a base portion that integrally fixes proximal ends of the pair of vibration arm portions, and groove portions on opposite surfaces of the pair of vibration arm portions along a longitudinal direction of the vibration arm portions, respectively, the method comprising:

forming a patterned protective film in an area other than on the groove portions; and

forming the groove portions by dry etching the wafer,

wherein, forming the patterned protective film comprises concurrently forming the protective film is on opposite surfaces of the wafer by positioning the wafer between plate members of a jig and depositing the patterned protective film through openings in the plate members.

3. A piezoelectric vibrator having a piezoelectric vibrating reed manufactured according to the method of claim 1 .

4. An oscillator in which the piezoelectric vibrator according to claim 3 is electrically connected to an integrated circuit as an oscillating element.

5. An electronic device in which the piezoelectric vibrator according to claim 3 is electrically connected to a measurement portion.

6. A radio-controlled timepiece in which the piezoelectric vibrator according to claim 3 is electrically connected to a filter portion.

7. The method according to claim 1 , wherein forming a first protective film having a predetermined thickness and forming a second protective film having a predetermined thickness comprises forming the first and second protective films to substantially the same thickness.

8. The method according to claim 7 , wherein the same thickness comprises 0.25 microns.

9. The method according to claim 2 , wherein forming a patterned protective film comprises forming the protective film in the absence of a photoresist material.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 26, 2013
From: SEIKO INSTRUMENTS INC.
To: SII CRYSTAL TECHNOLOGY INC.
Reel/Frame 031085/0852 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2011
From: MINEGISHI, TAKASHI
To: SEIKO INSTRUMENTS INC.
Reel/Frame 025867/0935 →
Continuity (2)
Continuation PCTJP2008065369 · Aug 28, 2008
Related Publication 20110193647A1 · Aug 11, 2011