Photoresist composition and method of forming pattern by using the same
View Patent ↗A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. and R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.
1. A photoresist composition, comprising:
an alkali-soluble resin;
a photosensitizer comprising a first compound comprising a diazonaphthoquinone represented by Formula 1 and a second compound comprising a diazonaphthoquinone represented by Formula 2; and
a solvent,
wherein the ratio of the first compound to the second compound ranges from about 1:3 to about 1:7, based on parts per weight of the photoresist composition, and
wherein R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and wherein R2 is a bond to a corresponding oxygen.
2. The photoresist composition of claim 1 , wherein the photosensitizer ranges from about 1 part by weight to about 25 parts by weight of the photoresist composition.
3. The photoresist composition of claim 1 , wherein the second compound ranges from about 10 parts by weight to about 20 parts by weight of the photoresist composition.
4. The photoresist composition of claim 1 , wherein the photosensitizer absorbs H-line light comprising a wavelength of about 405 nm.
5. The photoresist composition of claim 1 , further comprising at least one additive selected from the group consisting of a surfactant, an adhesion promoter, a plasticizer, a sensitizer, and a resin.
6. The photoresist composition of claim 1 , wherein the photoresist composition is a positive photoresist composition.
7. The photoresist composition of claim 1 , wherein the alkali-soluble resin ranges from about 2 parts by weight to about 50 parts by weight of the photoresist composition.
8. The photoresist composition of claim 1 , wherein the alkali-soluble resin comprises a weight-average molecular weight ranging from about 2,000 to about 50,000.
9. The photoresist composition of claim 1 , wherein the alkali-soluble resin comprises a novolac resin comprising meta-cresol and para-cresol.
10. A method of forming a pattern, the method comprising:
forming a photoresist film by arranging a photoresist composition on a pattern forming film, the photoresist composition comprising an alkali-soluble resin, a photosensitizer comprising a first compound comprising a diazonaphthoquinone represented by Formula 1 and a second compound comprising a diazonaphthoquinone represented by Formula 2, and a solvent;
exposing the photoresist film to light;
forming a photoresist pattern by developing the photoresist film; and
patterning the pattern forming film using the photoresist pattern as an etch mask,
the ratio of the first compound to the second compound ranges from about 1:3 to about 1:7, based on parts per weight of the photoresist composition, and
R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.
11. The method of claim 10 , wherein the photosensitizer ranges from about 1 part by weight to about 25 parts by weight of the photoresist composition.
12. The method of claim 10 , wherein the second compound ranges from about 10 parts by weight to about 20 parts by weight of the photoresist composition.
13. The method of claim 10 , further comprising performing a condensation reaction of 2,3,4,4′-tetrahydroxybenzophenone with a naphthoquinone 1,2-diazide-5-sulfonyl chloride compound to obtain the first compound.
14. The method of claim 10 , further comprising performing a condensation reaction of 4,4′,4″-ethylidynetrisphenol with a naphthoquinone 1,2-diazide-5-sulfonyl chloride compound to obtain the second compound.
15. The method of claim 10 , wherein in the exposing the photoresist film to light, the light comprises an H-line light comprising a wavelength of about 405 nm.
16. The method of claim 10 , wherein the photoresist composition comprises a positive photoresist composition.
17. The method of claim 10 , wherein the alkali-soluble resin comprises a novolac resin comprising meta-cresol and para-cresol.
18. The method of claim 10 , wherein the alkali-soluble resin ranges from about 2 parts by weight to about 50 parts by weight of the photoresist composition.