System and method for crystal growing
View Patent ↗To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
1. A system for growing a crystal from a liquid in a crucible, the system comprising:
a support structure to support the crucible from below;
at least one heating element to provide heat to the crucible; and
a heat exchanger to extract heat from the support structure, wherein the heat exchanger includes insulation that is movable away from the support structure.
2. The system of claim 1 , wherein the support structure includes a graphite support block.
3. The system of claim 1 , wherein the at least one heating element includes a plurality of electrical heating elements positioned to the side of the crucible.
4. The system of claim 1 , wherein the crystal is a multicrystalline ingot.
5. The system of claim 1 , wherein the crystal is a single crystal boule.
6. The system of claim 1 , wherein the crystal is silicon.
7. The system of claim 1 , wherein the support structure and crucible are configured to be kept in a stationary position while a crystal is grown, and wherein the heat exchanger is movable while the crystal is grown.
8. The system of claim 7 , further comprising a controller for controlling the amount of heat provided from the at least one heating element to the crucible, and for controlling the heat exchanger to cause the insulation to be moved to be closer to or further from the crucible while a crystal is grown.
9. A method of growing a crystal from a liquid in a crucible, said method comprising:
heating the crucible with at least one heating element; and
extracting heat from the crucible using a heat exchanger in thermal contact with the crucible,
wherein the crucible is supported from below by a support structure and wherein the heat exchanger includes insulation that is movable away from the support structure.
10. The method of claim 9 , wherein the step of extracting heat from the crucible includes moving the insulation away from the support structure.
11. The method of claim 10 , wherein the insulation is lowered away from the support structure.
12. The method of claim 9 , wherein heating the crucible includes operating a plurality of electric heating elements positioned to the side of the crucible.
13. The method of claim 9 , wherein the support structure includes a graphite support block, the extracting including moving the insulation away from the graphite support block.
14. The method of claim 9 , wherein the support structure and crucible are not moved during the crystal growing process, and wherein the insulation is moved during the crystal growing process.
15. The method of claim 9 , wherein the crystal is silicon.
16. The method of claim 9 , wherein the crystal is a multicrystalline ingot.
17. The method of claim 9 , wherein the crystal is a single crystal boule.
18. The method of claim 9 , further comprising controlling the at least one heating element to increase and decrease the heat provided to the crucible, and further controlling the extracting by causing the insulation to be moved to be closer to or further away from the crucible.