Semiconductor device and method of manufacturing semiconductor device
View Patent ↗Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p + -type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p + -type isolation layer. A p-type region is provided and is electrically connected to the p + -type isolation layer. The p + -type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.
1. A semiconductor device comprising:
a substrate of a first conduction type, the substrate having a first main surface, a second main surface and a concave portion formed on the second main surface;
a front surface element structure provided on the first main surface of the substrate;
a first semiconductor region of a second conduction type formed at a side end of the front surface element structure, the concave portion extending from the second main surface of the substrate to the first semiconductor region; and
a second semiconductor region of the second conduction type disposed on the second main surface of the substrate and being electrically connected to the first semiconductor region, wherein
the first semiconductor region includes a cleavage plane, an entire portion of the cleavage plane between a boundary, which is an intersection of a bottom wall of the concave portion and a side wall of the concave portion, and an intersection of the cleavage plane and the first main surface of the substrate, being in the first semiconductor region.
2. The semiconductor device according to claim 1 , wherein
the substrate further includes a third semiconductor region of the first conduction type, and the first semiconductor region is adjacent to the third semiconductor region, and
an amount of impurities included in a portion of the first semiconductor region between the cleavage plane and the side end of the front surface element structure is set such that a depletion layer extending from the third semiconductor region into the first semiconductor region does not reach the cleavage plane.
3. The semiconductor device according to claim 2 , wherein the amount of impurities is equal to or more than 1.2×10 12 /cm 2 .
4. The semiconductor device according to claim 1 , wherein an amount of impurities included in a portion of the first semiconductor region between the cleavage plane and the side end of the front surface element structure is equal to or more than 1.2×10 12 /cm 2 .
5. The semiconductor device according to claim 1 , wherein a side of each cleavage plane is formed at the boundary.
6. The semiconductor device of claim 1 , wherein a first distance, between the side end of the front surface element structure and the intersection of the cleavage plane and the first main surface, is longer than a second distance between the side end and the boundary in a direction parallel to the first main surface.