Methods and compositions for doping silicon substrates with molecular monolayers

1. A method of preparing a doped Si surface, comprising:

a) cleaning a Si surface to remove oxides; and

b) contacting the cleaned Si surface with a dilute dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant material effective for doping a Si surface, wherein said contacting is for a time and at a temperature effective to form a layer of dopant material on the surface.

2. The method of claim 1 wherein the method further includes the step of applying a capping layer to the doped area.

3. The method of claim 2 wherein the method further includes the step of diffusing the dopant into the Si surface by annealing the treated Si substrate.

4. A method of doping a Si surface, comprising:

a) cleaning a Si surface to remove oxides;

b) contacting the cleaned Si surface with a dilute dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant material effective for doping a Si surface, wherein said contacting is for a time and at a temperature effective to form a layer of dopant material on the surface;

(c) applying a capping layer to the doped area; and

d) diffusing the dopant into the Si surface by annealing the treated Si substrate.

5. The method of claim 1 wherein said cleaning step comprises contacting the Si surface with dilute HF.

6. The method of claim 1 wherein the method additionally includes the step of treating the cleaned Si surface with 3-methyl-3-methoxybutanol prior to contacting with the dilute dopant solution.

7. The method of claim 1 wherein said dopant material is provided in an amount of between 1% and 20%.

8. The method of claim 1 wherein said dopant material is provided in an amount of 4% or less.

9. The method of claim 1 wherein said dopant material is diethyl 1-propylphoshonate.

10. The method of claim 1 wherein said dopant material is allylboronic acid pinacol ester.

11. The method of claim 3 wherein said diffusing step comprises using rapid thermal annealing.

12. The method of claim 1 wherein said dilute dopant solution comprises an additional solvent in addition to tetraethylene glycol dimethyl ether.

13. A method of preparing a doped Si surface, comprising:

a) cleaning a Si surface to remove oxides; and

b) contacting the cleaned Si surface with a dilute dopant solution comprising:

i) at least one solvent selected from the group consisting of tetraethylene glycol dimethyl ether, triethylene glycol dimethyl ether, diethylene glycol dimethyl ether, dimethylsulfoxide, dimethylsulfone, N-methylpyrrolidone, 1 formyl piperidine, Isopar M, ethanolamine, diethanolamine, triethanolamine, linoleic acid, oleic acid, palmitoleic acid, safflower oil, grape seed oil, poppyseed oil, sunflower oil, hemp oil, corn oil, wheat germ oil, cottonseed oil, soybean oil, walnut oil, sesame oil, rice bran oil, pistachio oil, peanut oil, canola oil, chicken fat, egg yolk, linseed oil, lard, olive oil, palm oil, cocoa butter, macadamia oil, butter, and coconut oil; and

ii) a dopant material effective for doping a Si surface,

wherein said contacting is for a time and at a temperature effective to form a layer of dopant material on the surface.

14. The method of claim 13 wherein said dopant material is a member selected from the group consisting of 5-5-dimethyl-1,3,2-dioxaphosphorinan-2-one, triphenylphosphate, trimethylphosphite, diethyl ethylphosphonate, dimethyl methylphosphonate, diethyl (2-oxobutyl) phosphonate, diethyl (hydroxymethyl)phosphonate, dimethyl (3-phenoxyacetonyl)phosphonate, bis(4-methoxyphenyl)phosphine, bis(3,5-dimethylphenyl)phosphine, diethyl (2-oxopropyl)phosphonate, diethyl 1-phenylethyl phosphonate, diethyl 2-phenylethyl phosphonate, diethyl cyclopropylmethyl phosphonate, dimethyl (3-phenoxyacetonyl)phosphonate, diethyl (2-methylallyl)phosphonate, and Diethyl-1-propylphosphonate.

15. The method of claim 13 wherein the method further includes the step of applying a capping layer to the doped area.

16. The method of claim 15 wherein the method further includes the step of diffusing the dopant into the Si surface by annealing the treated Si substrate.

17. The method of claim 13 wherein said cleaning step comprises contacting the Si surface with dilute HF.

18. The method of claim 13 wherein the method additionally includes the step of treating the cleaned Si surface with 3-methyl-3-methoxybutanol prior to contacting with the dilute dopant solution.

19. The method of claim 13 wherein said solvent is tetraethylene glycol dimethyl ether.

20. The method of claim 13 wherein said solvent includes tetraethylene glycol dimethyl ether and a secondary solvent selected from the group consisting of triethylene glycol dimethyl ether, diethylene glycol dimethyl ether, dimethylsulfoxide, dimethylsulfone, N-methylpyrrolidone, 1 formyl piperidine, Isopar M, ethanolamine, diethanolamine, triethanolamine, linoleic acid, oleic acid, palmitoleic acid, safflower oil, grape seed oil, poppyseed oil, sunflower oil, hemp oil, corn oil, wheat germ oil, cottonseed oil, soybean oil, walnut oil, sesame oil, rice bran oil, pistachio oil, peanut oil, canola oil, chicken fat, egg yolk, linseed oil, lard, olive oil, palm oil, cocoa butter, macadamia oil, butter, and coconut oil.

21. The method of claim 13 wherein said dopant material is provided in an amount of between 1% and 20%.

22. The method of claim 13 wherein said dopant material is provided in an amount of 4% or less.

23. The method of claim 13 wherein said dopant material is diethyl 1-propylphoshonate.

24. The method of claim 13 wherein said dopant material is allylboronic acid pinacol ester.

25. The method of claim 16 wherein said diffusing step comprises using rapid thermal annealing.