Solid-state imaging device
View Patent ↗A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.
1. A solid-state imaging device comprising:
a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges;
a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface; and
a transmission-preventing film which is disposed above the second surface of the substrate and at a position closer to the substrate than to the wiring film.
2. The solid-state imaging device according to claim 1 , wherein the transmission-preventing film is a reflection film.
3. The solid-state imaging device according to claim 1 , wherein the circuit region includes
an amplifier transistor for amplifying and outputting pixel signals corresponding to the amount of accumulated charges in the photoelectric conversion section,
a selection transistor for selecting a pixel from which signal charges are read, and
a reset transistor for resetting charges accumulated in the photoelectric conversion section.
4. The solid-state imaging device according to claim 3 , wherein the circuit region further includes a transfer transistor for selecting the timing of transfer of signal charges accumulated in the photoelectric conversion section to the amplifier transistor.
5. The solid-state imaging device according to claim 4 , wherein the photoelectric conversion section includes
an n-type layer which accumulates electrons serving as signal charges, and
a p-type layer which is provided in a surface region of the n-type layer and which accumulates holes.
6. The solid-state imaging device according to claim 1 , wherein transmission-preventing film is a silicide film.
7. The solid-state imaging device according to claim 1 , wherein
the substrate is a silicon substrate, and
a gate electrode made of a polysilicon film is disposed on the silicon substrate with a gate insulating film therebetween.
8. The solid-state imaging device according to claim 7 , wherein
transmission-preventing film is a silicide film, and
the silicide film is formed by placing a metal film on the silicon substrate and the polysilicon film and performing heat treatment.
9. The solid-state imaging device according to claim 8 , wherein the light-shielding metal film or alloy film is formed in a pattern corresponding to light-receiving regions of the photoelectric conversion sections.
10. The solid-state imaging device according to claim 1 , wherein the transmission-preventing film is a light-shielding metal film or alloy film.
11. A solid-state imaging apparatus comprising:
a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges;
a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface;
a transmission-preventing film which is disposed above the second surface of the substrate and at a position closer to the substrate than to the wiring film; and
a signal processing portion which processes image signals based on the signal charges.