Semiconductor device

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Quick Facts

Patent No.: US 9,036,388
App. No.: 13/043,885
Granted: May 19, 2015
Kind: B2

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Abstract

A semiconductor device of a three-level inverter circuit with a reduced number of power supplies for driving IGBTs. The semiconductor device includes a series-connected circuit of IGBTs between P and N of a DC power supply and an AC switch element that is connected between a series connection point of the series-connected circuit and a neutral point of the DC power supply. The series-connected circuit and the AC switch element are integrated into one module. The AC switch element is formed by connecting a collector of a first IGBT to which a diode is connected in reverse parallel and a collector of a second IGBT to which a diode is connected in reverse parallel, and an intermediate terminal is provided at a connection point between the collectors.

Claims (73)

1. A semiconductor device that is applied to a three-level voltage-type inverter, comprising:

a first IGBT to which a diode is connected in reverse parallel and which has a collector connected to a positive terminal of a DC circuit;

a second IGBT to which a diode is connected in reverse parallel and which has an emitter connected to a negative terminal of the DC circuit; and

an AC switch that is connected between a connection point between an emitter of the first IGBT and a collector of the second IGBT and a neutral terminal between the positive terminal and the negative terminal of the DC circuit,

wherein the first IGBT, the second IGBT, and the AC switch are accommodated in one package,

the AC switch is formed by connecting a collector of a third IGBT to which a diode is connected in reverse parallel and a collector of a fourth IGBT to which a diode is connected in reverse parallel, and

an intermediate terminal is provided between the collector of the third IGBT and the collector of the fourth IGBT,

the intermediate terminal is configured and arranged to connect to a component outside of the package containing the first IGBT, the second IGBT, and the AC switch, and

the intermediate terminal has a portion that is exposed to outside of the package.

2. The semiconductor device according to claim 1 ,

wherein the first to fourth IGBTs to each of which one of the diodes is connected in reverse parallel form a switching circuit corresponding to one phase, and

a plurality of the switching circuits each corresponding to one phase is accommodated in one package.

3. The semiconductor device according to claim 1 ,

wherein each of the first to fourth IGBTs has a terminal of an auxiliary emitter.

4. The semiconductor device according to claim 2 ,

wherein each of the first to fourth IGBTs has a terminal of an auxiliary emitter.

5. The semiconductor device according to claim 3 ,

wherein, among the first to fourth IGBTs, the IGBTs having the emitters at the same potential share the terminal of the auxiliary emitter.

6. The semiconductor device according to claim 4 ,

wherein, among the first to fourth IGBTs, the IGBTs having the emitters at the same potential share the terminal of the auxiliary emitter.

7. The semiconductor device according to claim 1 ,

wherein the collector of the first IGBT, the emitter of the second IGBT, and the neutral terminal are main terminals, and

the intermediate terminal and the gates and the auxiliary emitters of the first to fourth IGBTs are terminals smaller than the main terminals.

8. The semiconductor device according to claim 2 ,

wherein the collector of the first IGBT, the emitter of the second IGBT, and the neutral terminal are main terminals, and

the intermediate terminal and the gates and the auxiliary emitters of the first to fourth IGBTs are terminals smaller than the main terminals.

9. The semiconductor device according to claim 3 ,

wherein the collector of the first IGBT, the emitter of the second IGBT, and the neutral terminal are main terminals, and

the intermediate terminal and the gates and the auxiliary emitters of the first to fourth IGBTs are terminals smaller than the main terminals.

10. The semiconductor device according to claim 4 ,

wherein the collector of the first IGBT, the emitter of the second IGBT, and the neutral terminal are main terminals, and

the intermediate terminal and the gates and the auxiliary emitters of the first to fourth IGBTs are terminals smaller than the main terminals.

11. The semiconductor device according to claim 5 ,

wherein the collector of the first IGBT, the emitter of the second IGBT, and the neutral terminal are main terminals, and

the intermediate terminal and the gates and the auxiliary emitters of the first to fourth IGBTs are terminals smaller than the main terminals.

12. The semiconductor device according to claim 6 ,

wherein the collector of the first IGBT, the emitter of the second IGBT, and the neutral terminal are main terminals, and

the intermediate terminal and the gates and the auxiliary emitters of the first to fourth IGBTs are terminals smaller than the main terminals.

13. The semiconductor device according to claim 7 ,