Crystallization method of amorphous silicon layer
View Patent ↗A crystallization method is disclosed. In one embodiment, the method includes providing a substrate having an amorphous silicon layer, wherein the substate has first and second sides opposing each other and irradiating a laser beam onto the substrate so as to have an inclined angle with respect to the first and second sides of the substrate. The method further includes relatively moving one of the laser beam and the substate with respect to the other i) in a first direction from the first side to the second side of the substate and ii) in a second direction which crosses the first direction.
1. A crystallization method using a sequential lateral solidification process, the method comprising:
providing a substrate having an amorphous silicon layer, wherein the substrate has first and second sides opposing each other; and
irradiating a laser beam onto the substrate so as to have an inclined angle with respect to the first and second sides of the substrate; and
relatively moving one of the laser beam and the substrate with respect to the other i) in a first direction from the first side to the second side of the substrate and ii) in a second direction which crosses the first direction,
wherein the substrate has third and fourth sides each substantially perpendicularly arranged with the first and second sides, wherein the third side has a lower end, wherein the fourth side has an upper end, and wherein the lower end and upper end of the substrate are substantially diagonally arranged with respect to each other, and wherein a relative movement velocity V of the laser beam in the second direction with respect to the substrate satisfies the following equation:
V
=
C
-
C
2
+
D
2
·
cos
(
α
+
θ
)
D
A
×
B
wherein C represents the length of the first side or the second side of the substrate and D represents the length of the third side or fourth side of the substrate, wherein α represents an angle which an oblique line of the substrate forms with respect to the first side of the substrate and θ represents an inclined angle which the first side of the substrate forms with respect to the laser beam, and wherein A represents a scan pitch SC [nm] of the laser beam and B represents a frequency of the laser beam.
2. The crystallization method of claim 1 , wherein the laser beam has a first end and a second end opposing each other and formed along the second direction,
wherein when the laser beam is irradiated toward the first side of the substrate, the first end of the laser beam coincides with the lower end of the substrate, and
wherein when the laser beam is irradiated toward the second side of the substrate, the second end of the laser beam coincides with the upper end of the substrate.
3. The crystallization method of claim 1 , wherein the substrate and the laser beam are relatively moved in the first and second directions in succession.
4. The crystallization method of claim 1 , wherein the relative movement is performed by moving only the substrate.
5. The crystallization method of claim 1 , wherein the relative movement is performed by moving only the laser beam.
6. The crystallization method of claim 1 , wherein the first direction and the second direction are substantially perpendicular to each other.
7. The crystallization method of claim 1 , wherein the laser beam has a width and a length which is significantly greater than the width, and wherein the length of the laser beam extends in the second direction.
8. The crystallization method of claim 7 , wherein a pattern mask is not used in the crystallization method.
9. The crystallization method of claim 7 , wherein the length of the laser beam is substantially equal to at least one of the lengths of the first and second sides of the substrate.
10. A crystallization method comprising:
providing a substrate having an amorphous silicon layer, wherein the substrate has first and second sides opposing each other;
irradiating a laser beam onto the substrate, wherein the laser beam has a width and a length which is significantly greater than the width, and wherein the length direction of the laser beam forms an inclined angle with respect to the first and second sides of the substrate;
first moving at least one of the laser beam and the substrate in a first direction; and
second moving at least one of the laser beam and the substrate in a second direction which crosses the first direction,
wherein the substrate has third and fourth sides each substantially perpendicularly arranged with the first and second sides, wherein the third side has a lower end, wherein the fourth side has an upper end, wherein the lower end and upper end of the substrate are substantially diagonally arranged with respect to each other, and wherein a relative movement velocity V of the laser beam in the second direction with respect to the substrate satisfies the following equation:
V
=
C
-
C
2
+
D
2
·
cos
(
α
+
θ
)
D
A
×
B
wherein C represents the length of the first side or the second side of the substrate and D represents the length of the third side or fourth side of the substrate, wherein α represents an angle which an oblique line of the substrate forms with respect to the first side of the substrate and θ represents an inclined angle which the first side of the substrate forms with respect to the laser beam, and wherein A represents a scan pitch SC [nm] of the laser beam and B represents a frequency of the laser beam.
11. The crystallization method of claim 10 , further comprising repeating the first moving and second moving until the amorphous silicon layer is substantially completely crystallized.
12. The crystallization method of claim 10 , wherein the second moving is substantially continuously performed with respect to the first moving.
13. The crystallization method of claim 10 , wherein the first moving and second moving are performed in a stepwise manner.
14. The crystallization method of claim 10 , wherein both of the laser beam and substrate are moved in at least one of the first and second moving.