IP Library Granted Patent US 8,410,353
Granted Patent B2
US 8,410,353 · App. 13/048,955 · Granted Apr 2, 2013

Asymmetric surface texturing for use in a photovoltaic cell and method of making

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,410,353
App. No.
13/048,955
Granted
Apr 2, 2013
Kind
B2
Abstract

A novel surface texturing provides improved light-trapping characteristics for photovoltaic cells. The surface is asymmetric and includes shallow slopes at between about 5 and about 30 degrees from horizontal as well as steeper slopes at about 70 degrees or more from horizontal. It is advantageously used as either the front or back surface of a thin semiconductor lamina, for example between about 1 and about 20 microns thick, which comprises at least the base or emitter of a photovoltaic cell. In embodiments of the present invention, the shallow slopes are formed using imprint photolithography.

Claims (20)

1. A photovoltaic assembly comprising:

a monocrystalline semiconductor lamina having a thickness between about 0.5 and about 20 microns, the semiconductor lamina having a first textured surface and a second surface substantially parallel to the first textured surface, wherein

at least 50 percent of the first textured surface area is first faces and second faces, wherein the first faces are at an angle between ten and twenty-five degrees from horizontal, and the second faces are at least seventy degrees from horizontal, wherein the semiconductor lamina has a lamina widest dimension; and

a receiver element having a receiver widest dimension, wherein the semiconductor lamina is affixed to the receiver element at the second surface, wherein the receiver widest dimension does not exceed the lamina widest dimension by more than about 50 percent,

wherein the photovoltaic assembly comprises a photovoltaic cell.

2. The photovoltaic assembly of claim 1 wherein the photovoltaic assembly is affixed to a substrate or a superstrate.

3. The photovoltaic assembly of claim 2 wherein the photovoltaic assembly is one of a plurality of photovoltaic assemblies, and wherein each of the plurality of photovoltaic assemblies is affixed to the superstrate or substrate.

4. The photovoltaic assembly of claim 1 wherein, during normal operation of the photovoltaic assembly, a majority of light enters the semiconductor lamina at the first textured surface.

5. The photovoltaic assembly of claim 1 wherein the semiconductor lamina is substantially silicon.

6. A photovoltaic cell comprising:

a front surface of the photovoltaic cell;

a back surface of the photovoltaic cell; and

a monocrystalline silicon lamina between about 0.5 and about 20 microns thick;

wherein incident light enters the photovoltaic cell at the front surface, and at least a fraction of the incident light is reflected from the back surface,

wherein the incident light is reflected or refracted at a textured surface, wherein the textured surface is the front surface, the back surface, or a third surface between the front surface and the back surface, and

wherein at least 50 percent of the textured surface comprises first faces and second faces, wherein the first faces are at an angle between ten and twenty-five degrees from horizontal, and the second faces are at least seventy degrees from horizontal.

7. The photovoltaic cell of claim 6 wherein the photovoltaic cell is affixed to a receiver element.

8. The photovoltaic cell of claim 7 wherein the textured surface is the back surface of the cell, and the textured surface is coincident with a surface of the receiver element.

9. The photovoltaic cell of claim 6 wherein the textured surface is a surface of the lamina.

10. The photovoltaic cell of claim 6 wherein at least 90 percent of the textured surface comprises the first faces and the second faces.

Assignments (5)
CHANGE OF NAME Recorded May 16, 2023
From: NEUTRON THERAPEUTICS, INC.
To: NEUTRON THERAPEUTICS LLC
Reel/Frame 063662/0362 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2015
From: GTAT CORPORATION D/B/A GT ADVANCED TECHNOLOGIES
To: NEUTRON THERAPEUTICS INC.
Reel/Frame 037047/0004 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2012
From: SILICON VALLEY BANK; TWIN CREEKS TECHNOLOGIES, INC.
To: GTAT CORPORATION
Reel/Frame 029275/0076 →
SECURITY INTEREST Recorded Sep 28, 2012
From: TWIN CREEKS TECHNOLOGIES, INC.
To: SILICON VALLEY BANK
Reel/Frame 029124/0057 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2011
From: PETTI, CHRISTOPHER J
To: TWIN CREEKS TECHNOLOGIES, INC.
Reel/Frame 025987/0868 →