Flexible force or pressure sensor array using semiconductor strain gauge, fabrication method thereof and measurement method thereof
The force or pressure sensor array of the present invention effectively has both flexibility and elasticity. Since the substrate itself is a kind of a polymer material, the substrate can be bent or expanded. Although silicon, which is a material of the semiconductor strain gauge, is easily broken and solid, mechanical flexibility can be secured if it is fabricated extremely thin. To this end, particularly, disclosed is a flexible force or pressure sensor array using semiconductor strain gauges 110 , the sensor array comprising: a substrate 10 including: the semiconductor strain gauges 110 in which a plurality of elements formed in a certain array pattern is deformed by force or pressure, a pair of polymer film layers 120 and 130 having film surfaces contacted facing each other and containing the semiconductor strain gauge 110 between the film surfaces contacted with each other, and a pair of signal line layers formed on top and bottom surfaces of an insulating layer using either of the pair of polymer film layers 120 and 130 as the insulating layer and connected to the elements 111 of the array pattern to form electrodes, for fetching deformation signals outputted due to deformation of the elements 111 to outside; and a pair of elastomer layers 20 and 30 formed on both sides of the substrate 10 to contain the substrate 10 inside.
1. A flexible force or pressure sensor array using semiconductor strain gauges, the sensor array comprising:
a substrate including: the semiconductor strain gauge array in which a plurality of elements formed in a certain pattern is deformed by force or pressure, a pair of polymer film layers having film surfaces contacted facing each other and containing the semiconductor strain gauge between the film surfaces contacted with each other, and a pair of signal line layers formed on top and bottom surfaces of an insulating layer using either of the pair of polymer film layers as the insulating layer and connected to the elements of the array pattern to form electrodes, for fetching deformation signals outputted due to deformation of the elements to outside; and
a pair of elastomer layers formed on both sides of the substrate to contain the substrate inside, wherein
the pair of signal line layers includes a plurality of first signal lines arranged in one direction on one surface of the insulating layer and a plurality of second signal lines arranged to be perpendicular to the one direction, and resistance of the elements is changed based on the force or the pressure and the deformation signals are outputted based on the changes of resistance.
2. The sensor array according to claim 1 , wherein the first and second signal lines configure a CMOS circuit, the first signal lines are provided with P-MOSFETs for flowing a constant current to the first signal lines, and the substrate further includes a plurality of switches respectively connected to one end of each of the second signal lines and a switch control unit for sequentially scanning each of the second signal lines to flow a current to any one of the second signal lines by controlling the switches.
3. The sensor array according to claim 1 , wherein the pair of polymer film layers is a pair of polyimide thin film layers.
4. The sensor array according to claim 1 , wherein the element has a shape of a bar, and the array pattern is a pattern arranging all the bar-shaped elements in a direction of length.
5. The sensor array according to claim 4 , wherein the sensor array has two substrates, and the two substrates are bonded together as one body by overlapping elements of a substrate with corresponding elements of the other substrate to cross each other.
6. The sensor array according to claim 4 , wherein a plurality of protrusions is uniformly formed on a surface of either of the elastomer layers, and the array pattern is a pattern arranged to face four directions below a border line formed by each protrusion and the surface of the elastomer layer.
7. The sensor array according to claim 2 , wherein the pair of signal line layers is transferred and formed through metal evaporation or a CMOS process.
8. The sensor array according to claim 1 , wherein the pair of elastomer layers is a pair of poly-dimethylsiloxane layers.