IP Library Granted Patent US 8,722,440
Granted Patent B2
US 8,722,440 · App. 13/051,572 · Granted May 13, 2014

Display substrate and method of manufacturing the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,722,440
App. No.
13/051,572
Granted
May 13, 2014
Kind
B2
Abstract

A display substrate includes a gate electrode, a gate insulating layer, and a semiconductor layer that are sequentially formed on a substrate. Also, the display substrate includes a color filter layer formed on the substrate and exposing a portion of the semiconductor layer, and source and drain electrodes that each overlap with the semiconductor layer and the color filter layer. The gate electrode, the gate insulating layer, and the semiconductor layer have the same shape as each other, and the gate electrode is insulated from the gate insulating layer and the semiconductor layer by the color filter layer.

Claims (31)

1. A method of manufacturing a display substrate, comprising:

forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer;

forming a color filter layer on the substrate and on the semiconductor layer, so as to expose a portion of the semiconductor layer;

forming a source electrode and a drain electrode spaced apart from the source electrode, each of the source electrode and the drain electrode disposed on the semiconductor layer and the color filter layer;

forming a protective layer on the semiconductor layer, the color filter layer, the source electrode, and the drain electrode; and

forming a pixel electrode on the protective layer, the pixel electrode being connected to the drain electrode,

wherein the protective layer is disposed directly on the exposed portion of the semiconductor layer, and

wherein the color filter layer directly contacts a side portion of the semiconductor layer, and the color filter layer extends to an edge of the semiconductor layer.

2. The method of claim 1 , wherein the forming of the gate electrode, the gate insulating layer, and the semiconductor layer comprises:

sequentially depositing a gate metal, an insulating material, and a semiconductor material on the substrate;

etching the insulating material and the semiconductor material; and

etching the gate metal.

3. The method of claim 2 , wherein etching the insulating material and the semiconductor material and etching the gate metal are performed using one mask.

4. The method of claim 1 , wherein forming the color filter layer comprises:

forming a color filter material on an entire surface of the substrate and directly on the semiconductor layer; and

etching the color filter material to expose a portion of an upper surface of the semiconductor layer.

5. The method of claim 4 , wherein the color filter layer covers a portion of the upper surface of the semiconductor layer.

6. The method of claim 5 , wherein a distance between the source electrode and the drain electrode is defined by an overlap area between the semiconductor layer and the color filter layer.

7. The method of claim 1 , further comprising forming a storage line on the color filter layer.

8. The method of claim 7 , wherein the source electrode, the drain electrode, and the storage line are formed simultaneously through a one-time process.

9. The method of claim 1 , wherein the substrate comprises a transparent plastic material.

10. A method of manufacturing a display substrate, comprising:

forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on a substrate the gate insulating layer;

forming a color filter material on an entire surface of the substrate and directly on the semiconductor layer;

etching the color filter material to expose a central portion of an upper surface of the semiconductor layer, so as to form a color filter layer;

forming a source electrode and a drain electrode spaced apart from the source electrode, each of the source electrode and the drain electrode overlapping with disposed on the semiconductor layer and the color filter layer;

forming a protective layer on the semiconductor layer, the color filter layer, the source electrode, and the drain electrode; and

forming a pixel electrode on the protective layer, the pixel electrode being connected to the drain electrode,

wherein the protective layer directly contacts the central portion of the semiconductor layer, and

wherein a side portion of the semiconductor layer contacts a layer different from the protective layer.

11. The method of claim 10 , wherein the color filter layer is disposed directly on a side portion of the semiconductor layer, and the color filter layer extends to an edge of the semiconductor layer.

Assignments (1)
CHANGE OF NAME Recorded Aug 28, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 028863/0810 →