Semiconductor device

1. A semiconductor device comprising:

a substrate having a multi-layer structure with a wiring pattern formed therein, and having a substantially rectangular shape in a plan view;

a connector provided on a short side of the substrate to be connectable to a host device;

a volatile semiconductor memory element provided on a front surface layer side of the substrate;

a plurality of nonvolatile semiconductor memory elements provided on the front surface layer side of the substrate; and

a controller provided on the front surface layer side of the substrate to control the volatile semiconductor memory element and the nonvolatile semiconductor memory elements,

wherein the wiring pattern includes a signal line formed between the connector and the controller to connect the connector to the controller, and

wherein the plurality of nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate, on the opposite side of the controller to the signal line.

2. The semiconductor device according to claim 1 , further comprising:

resistive elements provided on the front surface layer side of the substrate,

wherein the resistive elements are provided on wiring lines connecting the nonvolatile semiconductor memory elements to the controller, and are disposed near the nonvolatile semiconductor memory elements.

3. The semiconductor device according to claim 1 ,

wherein the nonvolatile semiconductor memory elements are disposed on one long side of the substrate.

4. The semiconductor device according to claim 1 ,

wherein a portion of the nonvolatile semiconductor memory elements is disposed on one long side of the substrate and another portion of the nonvolatile semiconductor memory elements is disposed on the other long side of the substrate.

5. The semiconductor device according to claim 1 ,

wherein the wiring pattern is formed to bypass a region overlapping the signal line.

6. The semiconductor device according to claim 5 ,

wherein the signal line is formed in a front surface layer of the substrate.

7. The semiconductor device according to claim 1 ,

wherein the volatile semiconductor memory element is disposed between the connector and the controller.

8. The semiconductor device according to claim 1 ,

wherein the signal line extends over the front surface layer of the substrate from the controller to the vicinity of the connector, passes through the substrate up to a rear surface layer of the substrate at a position near the connector, and extends over the rear surface layer to be connected to the connector.

9. The semiconductor device according to claim 8 ,

wherein almost entire region of the rear surface layer of the substrate is a ground.

10. The semiconductor device according to claim 1 ,

wherein a portion of the nonvolatile semiconductor memory elements is disposed between the controller and the connector.

11. The semiconductor device according to claim 10 ,

wherein the signal line is formed in an inside layer of the substrate.

12. The semiconductor device according to claim 1 ,

wherein the nonvolatile semiconductor memory elements are provided even on a rear surface layer side of the substrate.

13. The semiconductor device according to claim 1 ,

wherein the nonvolatile semiconductor memory elements are NAND flash memories.

14. The semiconductor device according to claim 1 ,

wherein the volatile semiconductor memory element is a DRAM.

15. The semiconductor device according to claim 1 ,

wherein the connector has a slit formed at a position deviating from the center of the substrate in a direction of a short side of the substrate.

16. The semiconductor device according to claim 1 ,

wherein the connector is a LIF connector.

17. The semiconductor device according to claim 1 , further comprising:

a power supply circuit provided on the front surface layer of the substrate,

wherein the power supply circuit is disposed near the connector.