THIN FILM SOLAR CELL AND METHOD FOR MAKING THE SAME
A thin film solar cell comprises: a back contact layer, an absorber layer adjacent to the back contact layer and comprising an absorber material and a dopant, a buffer layer, a dopant barrier layer between the absorber layer and the buffer layer, and a window layer adjacent to the buffer layer. Associated method for making the thin film solar cell is also provided.
1 . A thin film solar cell comprising:
a back contact layer;
an absorber layer adjacent to the back contact layer and comprising an absorber material and a dopant;
a buffer layer;
a dopant barrier layer between the absorber layer and the buffer layer; and
a window layer adjacent to the buffer layer.
2 . The thin film solar cell of claim 1 , further comprising a support layer.
3 . The thin film solar cell of claim 1 , wherein the dopant barrier ayer has a thickness in a range of from about 1 nm to about 100 nm.
4 . The thin film solar cell of claim 1 , wherein the dopant barrier layer has a thickness in a range of from about 5 nm to about 50 nm.
5 . The thin film solar cell of claim 1 , wherein the dopant barrier layer comprises a doped or undoped nitride or a doped or undoped oxynitride.
6 . The thin film solar cell of claim 1 , wherein the dopant barrier layer is transparent.
7 . The thin film solar cell of claim 1 , wherein the absorber material comprises cadmium tellurium, the dopant comprises copper, the buffer layer comprises cadmium sulfide and the window layer comprises transparent conductive oxides.
8 . The thin film solar cell of claim 7 , wherein the dopant barrier layer comprises at least one material selected from tantalum nitride (TaN), titanium nitride (TiN), hafnium nitride (HfN), zirconium nitride (ZrN), tungsten nitride (WN), molybdenum nitride (MoN), nickel nitride (NiN), ruthenium nitride (RuN), praseodymium nitride (PrN), titanium tungsten nitride (TiWN), tantalum silicon nitride (TaSiN), titanium silicon nitride (TiSiN), hafnium silicon nitride (HfSiN), zirconium silicon nitride (ZrSiN), tungsten silicon nitride (WSiN), molybdenum silicon nitride (MoSiN), nickel silicon nitride (NiSiN), ruthenium silicon nitride (RuSiN), praseodymium silicon nitride (PrSiN), tantalum oxynitride (TaNO), titanium oxynitride (TiNO), hafnium oxynitride (HfNO), zirconium oxynitride (ZrNO), tungsten oxynitride (WNO), molybdenum oxynitride (MoNO), nickel oxynitride (NiNO), ruthenium oxynitride (RuNO) and praseodymium oxynitride (PrNO).
9 . A method for making a thin film solar cell, comprising:
providing a back contact layer;
providing an absorber layer adjacent to the back contact layer and comprising an absorber material and a dopant;
providing a buffer layer;
providing a dopant barrier layer between the absorber layer and the buffer layer; and
providing a window layer adjacent to the buffer layer.
10 . The method of claim 9 , wherein the absorber material comprises cadmium tellurium, the dopant comprises copper, the buffer layer comprises cadmium sulfide and the window layer comprises transparent conductive oxides and wherein the dopant barrier layer comprises at least one material selected from tantalum nitride (TaN), titanium nitride (TiN), hafnium nitride (HfN), zirconium nitride (ZrN), tungsten nitride (WN), molybdenum nitride (MoN), nickel nitride (NiN), ruthenium nitride (RuN), praseodymium nitride (PrN), titanium tungsten nitride (TiWN), tantalum silicon nitride (TaSiN), titanium silicon nitride (TiSiN), hafnium silicon nitride (HfSiN), zirconium silicon nitride (ZrSiN), tungsten silicon nitride (WSiN), molybdenum silicon nitride (MoSiN), nickel silicon nitride (NiSiN), ruthenium silicon nitride (RuSiN), praseodymium silicon nitride (PrSiN), tantalum oxynitride (TaNO), titanium oxynitride (TiNO), hafnium oxynitride (HfNO), zirconium oxynitride (ZrNO), tungsten oxynitride (WNO), molybdenum oxynitride (MoNO), nickel oxynitride (NiNO), ruthenium oxynitride (RuNO), and praseodymium oxynitride (PrNO).
11 . A thin film solar cell comprising:
a back contact layer;
an absorber layer adjacent to the back contact layer and comprising cadmium telluride and copper;
a buffer layer comprising cadmium sulfide;
a copper barrier layer disposed between the absorber layer and the buffer layer; and
a window layer adjacent to the buffer layer.
12 . The thin film solar cell of claim 11 , wherein the copper barrier layer comprises a doped or undoped. nitride or a doped or undoped oxynitride.
13 . The thin film solar cell of claim 11 , wherein the copper barrier layer comprises at least one material selected from tantalum nitride (TaN), titanium nitride (TiN), hafnium nitride (HfN), zirconium nitride (ZrN), tungsten nitride (WN), molybdenum nitride (MoN), nickel nitride (NiN), ruthenium nitride (RuN), praseodymium nitride (PrN), titanium tungsten nitride (TiWN), tantalum silicon nitride (TaSiN), titanium silicon nitride (TiSiN), hafnium silicon nitride (HfSiN), zirconium silicon nitride (ZrSiN), tungsten silicon nitride (WSiN), molybdenum silicon nitride (MoSiN), nickel silicon nitride (NiSiN), ruthenium silicon nitride (RuSiN), praseodymium silicon nitride (PrSiN), tantalum oxynitride (TaNO), titanium oxynitride (TiNO), hafnium oxynitride (HfNO), zirconium oxynitride (ZrNO), tungsten oxynitride (WNO), molybdenum oxynitride (MoNO), nickel oxynitride (NiNO), ruthenium oxynitride (RuNO), and praseodymium oxynitride (PrNO).