Package of light emitting diode and method for manufacturing the same

1. A package of a semiconductor light emitting diode, the package comprising:

a base layer;

a semiconductor light emitting diode chip on the base layer;

a lead frame electrically connected to the semiconductor light emitting diode chip;

a reflective coating layer directly on the lead frame; and

a molding material covering the semiconductor light emitting diode chip in a predetermined shape,

wherein a bottom surface of the reflective coating layer is positioned higher than a bottom surface of the semiconductor light emitting diode chip,

wherein the lead frame includes at least one end portion that is not covered with the reflective coating layer, the at least one portion of the lead frame being adjacent to the semiconductor light emitting diode chip,

wherein a bottom surface of the reflective coating layer is substantially parallel to a top surface of the base layer,

wherein a thickness from the bottom surface to a topmost surface of the reflective coating layer is thinner than a thickness from the bottom surface to a topmost surface of the semiconductor light emitting diode chip, and

wherein the reflective coating lager comprises a white resin including at least one of titanium oxide, calcium carbonate, barium sulfate, and zinc oxide.

2. The package according to claim 1 , wherein the base layer comprises a metal.

3. The package according to claim 1 , further comprising:

an insulating layer on the base layer, wherein the insulating layer comprises a flame retardant-resin.

4. The package according to claim 1 , wherein ends of the lead frame and reflective coating layer are aligned with each other.

5. The package according to claim 1 , wherein ends of the reflective coating layer and base layer are aligned with each other.

6. The package according to claim 1 , wherein an entire top surface of the base layer is substantially flat.

7. The package according to claim 1 , wherein the bottom surface of the reflective coating layer is positioned higher than the topmost surface of the semiconductor light emitting diode chip.

8. A display device comprising:

a package of a semiconductor light emitting diode, the package including a base layer;

a semiconductor light emitting diode chip on the base layer;

a lead frame electrically connected to the semiconductor light emitting diode chip;

a reflective coating layer directly on the lead frame; and

a molding material covering the semiconductor light emitting diode chip in a predetermined shape,

wherein a bottom surface of the reflective coating layer is positioned higher than a bottom surface of the semiconductor light emitting diode chip,

wherein the lead frame includes at least one end portion that is not covered with the reflective coating layer, the at least one portion of the lead frame being adjacent to the semiconductor light emitting diode chip,

wherein a bottom surface of the reflective coating layer is substantially parallel to a top surface of the base layer,

wherein a thickness from the bottom surface to a topmost surface of the reflective coating layer is thinner than a thickness from the bottom surface to a topmost surface of the semiconductor light emitting diode chip, and

wherein the reflective coating layer comprises a white resin including at least one of titanium oxide, calcium carbonate, barium sulfate, and zinc oxide.

9. The display device according to claim 8 , wherein the base layer comprises a metal.

10. The display device according to claim 8 , the package further comprising:

an insulating layer on the base layer and wherein the insulating layer comprises a flame retardant-4 resin.

11. The display device according to claim 8 , wherein ends of the lead frame and reflective coating layer are aligned with each other.

12. The display device according to claim 8 , wherein ends of the reflective coating layer and base layer are aligned with each other.

13. The display device according to claim 8 , wherein an entire top surface of the base layer is substantially flat.

14. The display device according to claim 8 , wherein the bottom surface of the reflective coating layer is positioned higher than the topmost surface of the semiconductor light emitting diode chip.