A high frequency-MEMS switch with a bendable switching element, whose one end is placed on a high resistivity substrate provided with an insulator, furthermore with a contact electrode to supply charge carriers to the substrate, wherein an electrical field can be produced to create an electrostatic bending force on the switching element between the switching element and the substrate, wherein at least one implantation zone is formed in the substrate, essentially directly beneath the insulator, the implantation zone is contacted with the contact electrode, which is located above the insulator, through an opening in the insulator, and also has ohmic contact with the substrate.
1. A high frequency-MEMS switch comprising:
a high resistivity substrate provided with an insulator and at least one implantation zone, the insulator being disposed atop the substrate and having an opening, the at least one implantation zone formed in the substrate directly beneath the insulator and in ohmic contact with the substrate, contact with the substrate, a portion of the at least one implantation zone in contact with a signal conductor;
a bendable switching element having a first end and a movable second end, the first end disposed atop the insulator and in contact with a first contact electrode to supply charge carriers of a first polarity to the switching element, the movable second end extending from the first end over the insulator while bending away from the insulator, wherein the switching element is electrically isolated from the at least one implantation zone by the insulator; and
a second contact electrode disposed above the insulator and in contact with another portion of the at least one implantation zone through the opening in the insulator to supply charge carriers of a second polarity to the at least one implantation zone, wherein supply of charge carriers of opposite polarities to the first contact electrode and the second contact electrode produces an electrical field causing an electrostatic bending force on the switching element that bends the second end of the switching element into capacitive coupling with the at least one implantation zone to generate a signal on the signal conductor.
2. The high frequency-MEMS switch according to claim 1 , wherein the at least one implantation zone comprises a first implantation zone that is laterally staggered relative to the switching element.
3. The high frequency-MEMS switch according to claim 1 , wherein the at least one implantation zone comprises a second implantation zone that is disposed beneath the movable second end of the switching element, the second implantation zone being in contact with the signal conductor.
4. The high frequency-MEMS switch according to claim 1 , wherein the at least one implantation zone comprises several implantation zones.
5. The high frequency-MEMS switch according to claim 1 , wherein the at least one implantation zone comprises a first implantation zone that ends before the movable second end of the switching element.
6. The high frequency-MEMS switch according to claim 1 , wherein the at least one implantation zone comprises a first implantation zone that is laterally completely beneath the switching element and extends along a substantial part of its length.