Melt-processable, injection-moldable thermoplastic polymer composition and semi-conductive devices fabricated therewith

1. A melt-processable polymer composition comprising a thermoplastic, substantially fully hydrogenated vinyl aromatic block copolymer, the substantially fully hydrogenated block copolymer having a) a glass transition temperature of at least 138° centigrade, b) a complex shear viscosity at an oscillatory frequency of 0.025 radians per second and a temperature of 260° centigrade of at least 2×10 5 pascal-seconds, c) a viscosity at a temperature of 260° centigrade and an apparent shear rate of 100 reciprocal seconds of no more than 1000 pascal-seconds, d) a polymerized vinyl aromatic content, prior to hydrogenation, within a range of from sixty percent by weight to eighty percent by weight, each weight percent being based upon total block copolymer weight prior to hydrogenation, and e) a weight average molecular weight, prior to hydrogenation, within a range of from 40,000 grams per mole to 150,000 grams per mole.

2. The melt-processible polymer composition of claim 1 , wherein the vinyl aromatic block copolymer, prior to hydrogenation, has polymerized therein at least one block comprising a conjugated diene and at least two blocks comprising a vinyl aromatic monomer.

3. The melt-processible polymer composition of claim 2 , wherein the vinyl aromatic block copolymer, prior to hydrogenation, is a styrene-butadiene-styrene triblock copolymer.

4. An encapsulated light emitting diode comprising a semiconductor diode and an encapsulating amount of the melt-processible polymer composition of claim 1 , the diode being mounted on a metal lead frame and encapsulated with the melt-processible polymer composition.

5. The encapsulated light emitting diode of claim 4 , wherein the encapsulated light emitting diode has at least one of a) a ultraviolet light resistance as evidenced by a more than 70 percent retention of its original light transmittance at a wavelength within a range of from 350 nanometers to 450 nanometers following a 1000 hour QUV-A exposure in accordance with American Society for Testing and Materials (ASTM) Test G154; b) a light transmittance of at least 80 percent at a wavelength of 400 nanometers following exposure to a temperature of 110° C. for a period of 1000 hours; c) a change in transparency after exposure to a temperature of 85° centigrade and a relative humidity of 85 percent for 1000 hours of less than 10 percent relative to transparency of the encapsulated light emitting diode prior to such exposure; d) a change in yellowness index, following exposure to a temperature of 110° centigrade for 1000 hours of less than 2.0 relative to yellowness index of the encapsulated light emitting diode prior to such exposure; and e) as at least one of a change in diameter of less than 5 percent and a change in height of less than 5 percent after a single pass through an infrared reflow oven during which the light emitting diode has an exposure to a peak temperature that is greater than or equal to 250° centigrade, but less than 265° centigrade, of no more than fifteen seconds at a temperature within 5° centigrade of the peak temperature.

6. An illumination device, an electronic device or a light display device comprising at least one encapsulated light emitting diode of claim 5 .