Optoelectronic semiconductor component
View Patent ↗An optoelectronic semiconductor component is provided, having a connection carrier ( 2 ), an optoelectronic semiconductor chip ( 1 ), which is arranged on a mounting face ( 22 ) of the connection carrier ( 2 ), and a radiation-transmissive body ( 3 ), which surrounds the semiconductor chip ( 1 ), wherein the radiation-transmissive body ( 3 ) contains a silicone, the radiation-transmissive body ( 3 ) comprises at least one side face ( 31 ) which extends at least in places at an angle β of <90° to the mounting face ( 22 ) and the side face ( 3 ) is produced by a singulation process.
1. An optoelectronic semiconductor component comprising:
a connection carrier;
an optoelectronic semiconductor chip, which is arranged on a mounting face of the connection carrier; and
a radiation-transmissive body, which surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner,
wherein the radiation-transmissive body contains a silicone,
wherein the radiation-transmissive body comprises four side faces, wherein each of the four side faces extends completely at an angle of less than 90° to the mounting face, such that the radiation-transmissive body takes the form of a truncated pyramid,
wherein the side faces exhibit traces of a singulation process,
wherein each of the four side faces is produced in its entirety by an inclined sawing process, and
wherein the radiation-transmissive body comprises at least one side face, which extends at least in places at an angle of between 60° and 70° to the mounting face.
2. The optoelectronic semiconductor component according to claim 1 , wherein the at least one side face, which extends at least in places at an angle of between 60° and 70° to the mounting face, is produced by a singulation process.
3. The optoelectronic semiconductor component according to claim 1 , wherein the radiation-transmissive body comprises at least two side faces, which extend at least in places at an angle of less than 90° to the mounting face and are in each case produced by a singulation process.
4. The optoelectronic semiconductor component according to claim 3 , wherein the radiation-transmissive body comprises at least two side faces, which extend at least in places at an angle of between 60° and 70° to the mounting face and are in each case produced by a singulation process.
5. The optoelectronic semiconductor component according to claim 1 , wherein the radiation-transmissive body directly adjoins the mounting face of the connection carrier.
6. The optoelectronic semiconductor component according to claim 1 , wherein a planarisation layer is applied to the at least one side face of the radiation-transmissive body, which side face is produced by a singulation process.
7. The optoelectronic semiconductor component according to claim 1 , wherein the connection carrier comprises a base member, which is made of a ceramic material, wherein the base member has a thickness which amounts to at most 250 μm.
8. An optoelectronic semiconductor component comprising:
a connection carrier;
an optoelectronic semiconductor chip, which is arranged on a mounting face of the connection carrier; and
a radiation-transmissive body, which surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier, in form-fitting manner, wherein
the radiation-transmissive body contains a silicone, wherein the radiation-transmissive body comprises four side faces, wherein each of the four side faces extends completely at an angle of between 60° and 70° to the mounting faces, such that the radiation-transmissive body takes the form of a truncated pyramid,
wherein the side faces exhibit traces of a singulation process, and
wherein each of the four side faces is produced in its entirety by an inclined sawing process.
9. An optoelectronic semiconductor component comprising:
a connection carrier;
an optoelectronic semiconductor chip, which is arranged on a mounting face of the connection carrier; and
a radiation-transmissive body, which surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner,
wherein the radiation-transmissive body contains a silicone,
wherein the radiation-transmissive body comprises four side faces, wherein each of the four side faces extends completely at an angle of less than 90° to the mounting face, such that the radiation-transmissive body takes the form of a truncated pyramid,
wherein the side faces exhibit traces of a singulation process,
wherein each of the four side faces is produced in its entirety by an inclined sawing process,
wherein the radiation-transmissive body comprises at least one side face, which extends at least in places at an angle of between 60° and 70° to the mounting face, and
wherein the truncated pyramid has a base area that adjoins the mounting face and a top area that is arranged at the side of the truncated pyramid facing away from the mounting face, wherein the base area is larger than the top area.
10. The optoelectronic semiconductor component according to claim 8 , wherein the truncated pyramid has a base area that adjoins the mounting face and a top area that is arranged at the side of the truncated pyramid facing away from the mounting face, wherein the base area is larger than the top area.
11. A method of producing an optoelectronic semiconductor component including a connection carrier; an optoelectronic semiconductor chip, which is arranged on a mounting face of the connection carrier; and a radiation-transmissive body, which surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip, which do not face the connection carrier, in form-fitting manner, wherein the radiation-transmissive body contains a silicone, the radiation-transmissive body comprises at least one side face which extends at least in places at an angle of less than 90° to the mounting face, and the side face exhibits traces of a singulation process, the method further comprising the steps of:
providing the connection carrier;
attaching and electrically contacting the optoelectronic semiconductor chip to the mounting face of the connection carrier;
molding the radiation-transmissive body around the optoelectronic semiconductor chip; and
wherein the radiation-transmissive body comprises at least one side face, which extends at least in places at an angle of between 60° and 70° to the mounting face.
12. The method according to claim 11 , wherein a planarisation layer is sprayed onto the sawn side face of the radiation-transmissive body.