Organic EL device
View Patent ↗An organic EL device includes a substrate; an organic EL element formed on the substrate; and a sealing film formed on the organic EL element that is a CVD-deposited silicon nitride film containing from 0.85 at % to 0.95 at % H. A method of manufacturing the organic EL device includes the steps of: forming an organic EL element on a substrate; and forming a sealing film on the organic EL element in a process including mixing SiH 4 , NH 3 , N 2 , and H 2 , during which the H 2 is introduced at a flow rate set to from 1 volume percent to 5 volume percent of that of the N 2 , so that a silicon nitride film containing hydrogen atoms or hydrogen molecules is formed.
1. An organic EL device, comprising:
a substrate;
an organic EL element formed on the substrate; and
a sealing film formed on the organic EL element,
wherein the sealing film is a CVD-deposited silicon nitride film containing from 0.85 at % to 0.95 at % of H.
2. The organic EL device according to claim 1 , wherein the silicon nitride film has a film thickness ranging from 1000 to 5000 nm.
3. The organic EL device according to claim 1 , wherein the silicon nitride film has an absolute value of an internal stress that is 50 MPa or lower.
4. A method of manufacturing the organic EL device according to claim 1 , the method comprising the steps of:
forming an organic EL element on a substrate; and
forming a sealing film on the organic EL element in a process including mixing SiH 4 , NH 3 , N 2 , and H 2 during which the H 2 is introduced at a flow rate set to from 1 volume percent to 5 volume percent of that of the N 2 so that a silicon nitride film containing hydrogen atoms or hydrogen molecules is formed.
5. The method of manufacturing an organic EL device according to claim 4 , wherein the silicon nitride film is formed at a film deposition rate of 2.8 nm/sec or lower.
6. An organic EL device having barrier properties with respect to water and oxygen, comprising:
a substrate;
an organic EL element formed on the substrate; and
a SiNH sealing film formed on the organic EL element as a CVD-deposited SiNH film comprised of silicon, nitrogen, and from 0.85 at % to 0.95at % of hydrogen, and having a film thickness effective to provide said barrier properties with respect to water and oxygen so that dark spot formation is suppressed.
7. The organic EL device according to claim 6 , wherein the silicon nitride film has a film thickness ranging from 1000 nm to 5000 nm.
8. The organic EL device according to claim 6 , wherein the silicon nitride film has an absolute value of an internal stress that is 50 MPa or lower.
9. A method of manufacturing the organic EL device according to claim 6 , the method comprising the steps of:
forming an organic EL element on a substrate; and
forming a CVD-deposited sealing film on the organic EL element in a CVD deposition process including mixing SiH 4 , NH 3 , N 2 , and H 2 during which the H 2 is introduced at a flow rate set to from 1 volume percent to 5 volume percent of that of the N 2 so that a CVD-deposited silicon nitride film containing hydrogen atoms or hydrogen molecules is formed having a film thickness effective to provide barrier properties with respect to water and oxygen so that dark spot formation is suppressed.
10. The method of manufacturing an organic EL device according to claim 9 , wherein the silicon nitride film is formed at a film deposition rate of 2.8 nm/sec or lower.