ELECTRICAL AND OPTICAL PROPERTIES OF SILICON SOLAR CELLS
The method for manufacturing a photovoltaic cell or a photovoltaic converter panel comprises depositing a layer of p-doped amorphous silicon using a gas mixture comprising silane, methane, hydrogen and trimethylboron in a ratio of 1:2:2:1.25. In particular, plasma-enhanced chemical vapor deposition is used for the deposition. The corresponding photovoltaic cells and photovoltaic converter panels are also described.
1 . Method for manufacturing a photovoltaic cell or a photovoltaic converter panel, comprising the step of depositing a layer of p-doped amorphous silicon, more particularly of amorphous hydrogenated silicon, using a gas mixture comprising silane, methane, hydrogen and trimethylboron in a ratio of 1:2:2:1.25, each within ±15%.
2 . The method of claim 1 , wherein said gas mixture substantially consists of silane, methane, hydrogen and trimethylboron in said ratio of 1:2:2:1.25, each within ±15%.
3 . The method of claim 1 or claim 2 , wherein said ratio is substantially 1:2:2:1.25.
4 . The method of one of the preceding claims, wherein said depositing is carried out using a thin-film deposition process.
5 . The method of one of the preceding claims, wherein said depositing is carried out in a plasma-enhanced chemical vapor deposition process.
6 . The method of one of the preceding claims, wherein said layer is a layer of a p-i-n or a n-i-p junction of the photovoltaic cell or the photovoltaic converter panel.
7 . The method of one of the preceding claims, comprising after said deposition step the steps of depositing a thin-film layer of substantially intrinsic silicon, more particularly of substantially intrinsic hydrogenated silicon, and thereafter depositing a thin-film layer of n-doped silicon, more particularly of n-doped hydrogenated silicon, or comprising before said deposition step the steps of depositing a thin-film layer of n-doped silicon, more particularly of n-doped hydrogenated silicon, and thereafter depositing a thin-film layer of substantially intrinsic silicon, more particularly of substantially intrinsic hydrogenated silicon.
8 . The method of one of the preceding claims, wherein the photovoltaic cell or photovoltaic converter panel is a single-junction device or a micromorph tandem junction device or a triple junction device.
9 . Use of a gas mixture comprising silane, methane, hydrogen and trimethylboron in a ratio of 1:2:2:1.25, each within ±15%, for depositing a layer of p-doped amorphous silicon as a portion of a p-i-n or n-i-p junction of a photovoltaic cell or a photovoltaic converter panel.
10 . The use of claim 9 , wherein said gas mixture substantially consists of silane, methane, hydrogen and trimethylboron in a ratio of 1:2:2:1.25, each within ± 15 .
11 . Photovoltaic cell comprising at least one layer of p-doped amorphous silicon, more particularly of amorphous hydrogenated silicon, as obtainable in a deposition process using a gas mixture comprising silane, methane, hydrogen and trimethylboron in a ratio of 1:2:2:1.25, each within ±15%.
12 . The photovolaic cell of claim 11 , wherein said gas mixture comprises silane, methane, hydrogen and trimethylboron in a ratio of substantially 1:2:2:1.25.
13 . The photovolaic cell of claim 11 or claim 12 , wherein said deposition process is a thin-film deposition process, more particularly a plasma-enhanced chemical vapor deposition process.
14 . The photovolaic cell of one of claims 11 to 13 , wherein the photovoltaic cell is a thin-film silicon cell with one p-i-n or n-i-p junction, or a micromorph tandem junction device or a triple junction device.
15 . A photovoltaic converter panel comprising at least one photovoltaic cell according to one of claims 11 to 14 .