Method for purification of silicon tetrachloride
View Patent ↗An object of the present invention is to provide a method for purification of silicon tetrachloride which solves the problems of separating and removing organic chlorosilanes by distillation or adsorption. The method for purification of silicon tetrachloride comprises the steps of (1) bringing a mixed gas including a silicon tetrachloride gas and an oxygen-containing gas into contact with a catalyst layer which is controlled to a temperature of 200 to 450° C. and which includes at least one selected from the group consisting of activated carbon and metal-supporting activated carbon, and (2) cooling the mixed gas after brought into contact to separate and recover liquid silicon tetrachloride.
1. A method for purification of silicon tetrachloride comprising the steps of:
(1) bringing a mixed gas comprising a silicon tetrachloride gas and an oxygen-containing gas into contact with a catalyst layer which is controlled to a temperature of 200 to 450° C. and which comprises at least one selected from the group consisting of activated carbon and metal-supporting activated carbon, and
(2) cooling the mixed gas after brought into contact to separate and recover liquid silicon tetrachloride.
2. The method for purification of silicon tetrachloride as described in claim 1 , further comprising a step of (3) distilling the liquid silicon tetrachloride.
3. The method for purification of silicon tetrachloride as described in claim 1 , wherein the metal is at least one selected from the group consisting of platinum, palladium and rhodium.
4. The method for purification of silicon tetrachloride as described in claim 1 , wherein the molar ratio of oxygen/silicon tetrachloride gas in the mixed gas is in the range of 0.0004 to 0.2.
5. The method for purification of silicon tetrachloride as described in claim 1 , wherein the oxygen-containing gas is air or pure oxygen.