Contacting a device with a conductor
View Patent ↗The invention relates to a method for contacting a device with a conductor 6 , the device 1 comprising a substrate 2 with at least one cell 3 , a contact region 4 and an encapsulation 5 , wherein the encapsulation 5 encapsulates at least the contact region 4 , the method comprising the steps of arranging the conductor 6 on the encapsulation 5 , and interconnecting the conductor 6 with the contact region 4 without removing the encapsulation 5 between the conductor 6 and the contact region 4 beforehand. This invention is advantageous as the encapsulation 5 between the conductor 6 and the contact region 4 does not need to be removed beforehand anymore.
1. A method for contacting a device with a conductor ( 6 ), the device ( 1 ) comprising a substrate ( 2 ) with at least one cell ( 3 ), a contact region ( 4 ) and an encapsulation ( 5 ), wherein the encapsulation ( 5 ) encapsulates at least the contact region ( 4 ), the method comprising the steps of:
arranging the conductor ( 6 ) on the encapsulation ( 5 ), and
interconnecting the conductor ( 6 ) with the contact region ( 4 ) without removing the encapsulation ( 5 ) between the conductor ( 6 ) and the contact region ( 4 ) beforehand.
2. The method according to claim 1 , wherein interconnecting the conductor ( 6 ) with the contact region ( 4 ) comprises ultrasonic welding.
3. The method according to claim 1 , wherein the encapsulation ( 5 ) comprises a thin film.
4. The method according to claim 1 , wherein the thin film comprises an inorganic material and more preferably silicon nitride.
5. The method according to claim 1 , wherein the conductor ( 6 ) comprises a metal wire.
6. The method according to claim 5 , wherein the metal wire is flat and/or comprises copper, aluminum or silver.
7. The method according to claim 1 , wherein the contact region ( 4 ) serves as an electrode for the cell ( 3 ).
8. The method according to claim 1 , wherein the encapsulation ( 5 ) encapsulates at least the contact region ( 4 ) and the at least one cell ( 3 ).
9. The method according to claim 1 , wherein the device ( 1 ) comprises an OLED.
10. The method according to claim 2 , wherein the ultrasonic welding operates between ≧10 kHz and ≦80 kHz.