Substrate having a transparent electrode and method for producing the same
View Patent ↗A zinc oxide transparent electroconductive oxide has been difficult to use as a substrate having a transparent electrode because the oxide, when configured as a thin film, because of increased resistivity due to air and/or moisture exposure. Though doping can inhibit increase of resistance to some extent, there has been difficulty in selecting a type and an amount of a doping substance and because doping causes high initial resistance. A substrate having a transparent electrode with stable resistivity against various environments is produced by a magnetron sputtering method using a target composed of a zinc oxide transparent electroconductive oxide containing 0.50 to 2.75% silicon dioxide by weight relative to the oxide.
1. A method for producing a substrate including a base and at least one transparent electroconductive oxide layer composed mainly of zinc oxide and formed on the base, wherein the at least one transparent electroconductive oxide layer is composed of a transparent electroconductive oxide containing 0.8 to 2.2% silicon dioxide by weight relative to zinc oxide and having a peak amplitude ratio I LO /I TO of 0.40 or more, when I LO and I TO represent respectively peak amplitudes in a longitudinal optical mode and a transverse optical mode, both modes being A1-symmetrical optical vibration modes detected by a laser Raman spectrometry, the method comprising:
forming the transparent electroconductive oxide layer by a magnetron sputtering method using a mixture of zinc oxide and 0.8 to 2.2% silicon dioxide by weight relative to the zinc oxide as a sputtering target and applying a power density of 3.5 W/cm 2 or more to the target in a sputtering film formation.
2. The method as defined in claim 1 ,
wherein the magnetron sputtering method includes applying a power density of 18 W/cm 2 or less to the target in the sputtering film formation.
3. A method for producing a substrate having a transparent electrode including a base, a transparent electroconductive oxide layer composed mainly of zinc oxide and formed on the base, wherein the transparent electroconductive oxide layer is composed of a mixed oxide comprising zinc oxide and at least one oxide selected from the group consisting of gallium oxide, aluminum oxide, and boron oxide, and having a peak amplitude ratio I LO /I TO of 1.40 or more, when I LO and I TO represent respectively peak amplitudes in a longitudinal optical mode and a transverse optical mode, both modes being A1-symmetrical optical vibration modes detected by a laser Raman spectrometry, the method comprising:
forming the transparent electroconductive oxide layer by a magnetron sputtering method using a mixed oxide of zinc oxide and at least one oxide selected from the group consisting of gallium oxide, aluminum oxide, and boron oxide as a sputtering target and applying a power density of 6.0 W/cm 2 or more to the target in a sputtering film formation.
4. The method as defined in claim 3 ,
wherein the magnetron sputtering method includes applying a power density of 18 W/cm 2 or less to the target in the sputtering film formation.
5. A method for producing a substrate having a transparent electrode including a base and a transparent electroconductive oxide layer composed mainly of zinc oxide and formed on the base, wherein the transparent electroconductive oxide layer is composed of a mixed oxide comprising zinc oxide and at least one oxide selected from the group consisting of gallium oxide, aluminum oxide, and boron oxide, and the substrate satisfying the following two formulae with D (nm) representing a film thickness of the transparent electroconductive oxide layer, Sa (nm) representing Surface Average Roughness measured with an atomic force microscope, and Sds (μm −2 ) representing Density of Summits of the Surface: Sa≦0.01×D+4.0, Sds≧−0.55×D+420, the method comprising:
forming the transparent electroconductive oxide layer by a magnetron sputtering method using a mixed oxide of zinc oxide and at least one oxide selected from the group consisting of gallium oxide, aluminum oxide, and boron oxide as a sputtering target and applying a power density of 6.0 W/cm 2 or more to the target in a sputtering film formation.
6. The method as defined in claim 5 ,
wherein the magnetron sputtering method includes applying a power density of 18 W/cm 2 or less to the target in the sputtering film formation.
7. A method for producing
a substrate having a transparent electrode including a base, and at least one transparent electroconductive oxide layer composed mainly of zinc oxide and formed on the base, wherein the at least one transparent electroconductive oxide layer is composed of a transparent electroconductive oxide containing 0.8 to 2.2% silicon dioxide by weight relative to zinc oxide, the substrate further having a surface, wherein the surface has a first sheet resistance immediately after the substrate is formed and a second sheet resistance after the substrate is left at 85 degrees centigrade and 85% relative humidity for 10 days, a ratio of the second sheet resistance to the first sheet resistance being 0.75 to 1.5, the method comprising:
forming the transparent electroconductive oxide layer by a magnetron sputtering method using a mixture of zinc oxide and 0.8 to 2.2% silicon dioxide by weight relative to the zinc oxide as a sputtering target and applying a power density of 3.5 W/cm 2 or more to the target in a sputtering film formation.
8. The method as defined in claim 7 ,
wherein the magnetron sputtering method includes applying a power density of 18 W/cm 2 or less to the target in the sputtering film formation.