Perpendicular magnetic recording medium
View Patent ↗An object of the present invention is to provide a perpendicular magnetic recording medium the SNR of which is further improved while a high coercive force Hc is secured so that a higher recoding density can be achieved. The structure of a perpendicular magnetic recording medium 100 according to the present invention includes, on a base, at least a first magnetic recording layer 122 a having a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape; a non-magnetic split layer 122 b containing Ru disposed on the first magnetic layer; and a second magnetic recording layer 122 c that is disposed on the split layer and that has a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape, wherein the first magnetic layer and the second magnetic layer contain oxides that form the grain boundary, and when an oxide content of the first magnetic layer is represented by A and an oxide content of the second magnetic layer is represented by B, a relationship between the oxide contents A/B is in the range of 0.5<A/B<1.0.
1. A perpendicular magnetic recording medium, comprising:
a base;
a first magnetic layer having a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape;
a non-magnetic split layer containing (1) at least one of Ru and an Ru alloy and (2) an oxide, and being disposed directly on the first magnetic layer; and
a second magnetic layer that is disposed directly on the split layer and that has a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape, wherein
the first magnetic layer and the second magnetic layer contain oxides which form the grain boundary portion, and when an oxide content of the first magnetic layer is represented by A and an oxide content of the second magnetic layer is represented by B, a relationship between the oxide contents A/B is in the range of 0.7<A/B<0.9,
wherein the split layer is a single coating film in a range of 2 Å to 10 Å in film thickness, has no grain boundaries, and is operative to interrupt magnetism between the first magnetic layer and the second magnetic layer to generate antiferro-magnetic exchange coupling,
wherein the first magnetic layer is in a range of 0.7 nm to 3.0 nm in film thickness, and
wherein the first magnetic layer and second magnetic layer are different in composition and thickness from each other,
whereby said medium has a Hc of 4900 Oe or more and a SNR of 17.7 dB or more.
2. The perpendicular magnetic recording medium according to claim 1 , wherein the non-magnetic split layer comprises a material selected from a group consisting of RuO, RuCo, RuCr, RuSiO 2 , RuTiO 2 , RuCr 2 O 3 , RuWO 3 , and RuTa 2 O 5 .
3. The perpendicular magnetic recording medium according to claim 1 , wherein the first magnetic layer contains 5 mol % or more of oxide constituting the grain boundary portion.
4. The perpendicular magnetic recording medium according to claim 1 , wherein the second magnetic layer contains 5 mol % or more of oxide constituting the grain boundary portion.
5. The perpendicular magnetic recording medium according to claim 1 , wherein the second magnetic layer contains two or more kinds of oxides.
6. The perpendicular magnetic recording medium according to claim 1 , wherein the second magnetic layer contains one or plural oxides selected from a group consisting of SiO 2 , TiO 2 , and CoO.
7. The perpendicular magnetic recording medium according to claim 1 , wherein the first magnetic recording layer is formed of CoCrPt—Cr 2 O 3 .
8. The perpendicular magnetic recording medium according to claim 1 , wherein the second magnetic recording layer is formed of CoCrPt—SiO 2 —TiO 2 .
9. The perpendicular magnetic recording medium according to claim 1 , wherein the first magnetic recording layer is formed of CoCrPt—Cr 2 O 3 and the second magnetic recording layer is formed of CoCrPt—SiO 2 —TiO 2 .