Organic light-emitting device

1. An organic light-emitting device, comprising:

a first electrode including an indium tin oxide (ITO)-inclusive layer and a metal layer disposed over the ITO-inclusive layer, a metal of the metal layer having a smaller absolute value of a work function energy level than an absolute value of a work function energy level of the ITO;

a second electrode facing the first electrode; and

an organic layer between the first electrode and the second electrode, wherein a portion of the first electrode contacting the organic layer is in a substantially oxide-free state,

wherein the organic layer includes a hole injection layer, and

the hole injection layer includes 1,4,5,8,9,12-hexaaza-triphenylene-2,3,6,7,10,11-hexacarbonitrile, hexadecafluorophthalocyaninatocopper, or a mixture thereof, and a thickness of the hole injection layer is about 50 Åto about 100 Å; or

the hole injection layer includes MoO x (x is in the range of 2 to 6), W x O y (x is in the range of 1 to 18, and y is in the range of 2 to 49), or a mixture thereof, and a thickness of the hole injection layer is about 100 Å to about 800 Å;

wherein the hole injection layer contacts the first electrode.

2. The organic light-emitting device as claimed in claim 1 , wherein the metal of the first electrode includes silver, aluminum, or an alloy of silver and aluminum.

3. The organic light-emitting device as claimed in claim 1 , wherein the hole injection layer includes the mixture of 1,4,5,8,9,12-hexaaza-triphenylene-2,3,6,7,10,11-hexacarbonitrile and hexadecafluorophthalocyaninatocopper.

4. The organic light-emitting device as claimed in claim 1 , wherein the organic layer has a thickness of about 800 Å to about 1,500 Å.

5. The organic light-emitting device as claimed in claim 1 , wherein:

the first electrode is a positive electrode, and

the second electrode is a negative electrode.

6. The organic light-emitting device as claimed in claim 1 , wherein the first electrode has a thickness of about 200 Å to about 5,000 Å.