Organic light emitting diode display and method for manufacturing the same

1. An organic light emitting diode (OLED) display, comprising:

a substrate including a plurality of pixels defined thereon;

a thin film transistor (TFT) positioned at each pixel;

a negative electrode electrically connected to the TFT;

an organic emission layer positioned on the negative electrode, the organic emission layer including at least a light emission layer, a hole injection layer, and a hole transport layer; and

a positive electrode positioned on the organic emission layer, the positive electrode including an auxiliary layer positioned on the organic emission layer, a conductive layer positioned on the auxiliary layer, and an insulation layer positioned on the conductive layer,

wherein the auxiliary layer includes a stacked structure of a low energy level material layer and a dipole material layer, the low energy level material including a material having a lower energy level than that of the organic emission layer, and the dipole material layer including a dipole material.

2. The OLED display as claimed in claim 1 , wherein the auxiliary layer includes at least one of tungsten oxide, molybdenum oxide, fullerene (C60), copper phthalocyanine (CuPc), tetracyanoquinodimethane (TCNQ), triphenyltetrazoliumchloride (TTC), naphthalenetetracarboxylic dianhydride (NTCDA), perylenetetracarboxylic dianhydride (PTCDA), and copper hexadecafluorophthalocyanine (F 16 CuPc).

3. The OLED display as claimed in claim 1 , wherein the conductive layer includes at least one of silver, aluminum, chromium, samarium, and alloys thereof.

4. The OLED display as claimed in claim 1 , wherein the insulation layer includes at least one of silicon oxide, molybdenum oxide, tungsten oxide, an organic material, and an inorganic material.

5. The OLED display as claimed in claim 1 , wherein the auxiliary layer includes tungsten oxide, the conductive layer includes silver, and the insulation layer includes tungsten oxide.

6. The OLED display as claimed in claim 1 , wherein the low energy level material layer includes tungsten oxide, and the dipole material layer includes at least one of molybdenum oxide, fullerene, copper phthalocyanine, tetracyanoquinodimethane, triphenyltetrazoliumchloride, naphthalenetetracarboxylic dianhydride, perylenetetracarboxylic dianhydride, and copper hexadecafluorophthalocyanine.

7. The OLED display as claimed in claim 1 , wherein the low energy level material layer has a thickness ranging from about 5 nm to about 40 nm, and the dipole material layer has a thickness of about 10 nm or smaller.

8. The OLED display as claimed in claim 1 , wherein the conductive layer has a thickness ranging from about 8 nm to about 24 nm.

9. The OLED display as claimed in claim 8 , wherein the conductive layer has a thickness ranging from about 16 nm to about 24 nm.

10. The OLED display as claimed in claim 1 , wherein the insulation layer has a thickness ranging from about 30 nm to about 80 nm.

11. The OLED display as claimed in claim 1 , wherein the auxiliary layer, the conductive layer, and the insulation layer are sequentially stacked on the organic layer.

12. The OLED display as claimed in claim 1 , wherein the organic emission layer is directly on the negative electrode.

13. The OLED display as claimed in claim 1 , wherein the auxiliary layer is directly on the hole injection layer.

14. A method for manufacturing an organic light emitting diode (OLED) display, the method comprising:

preparing a substrate with a plurality of pixels defined thereon;

forming a thin film transistor (TFT) at each pixel;

forming a negative electrode, such that the negative electrode is electrically connected to the TFT;

forming an organic emission layer on the negative electrode, the organic emission layer including at least a light emission layer, a hole injection layer, and a hole transport layer; and

forming a positive electrode on the organic emission layer, the positive electrode including an auxiliary layer on the organic emission layer, a conductive layer on the auxiliary layer, and an insulation layer on the conductive layer,

wherein the auxiliary layer includes a stacked structure of a low energy level material layer and a dipole material layer, the low energy level material including a material having a lower energy level than that of the organic emission layer, and the dipole material layer including a dipole material.

15. The method as claimed in claim 14 , wherein the auxiliary layer is formed of at least one of tungsten oxide, molybdenum oxide, fullerene (C60), copper phthalocyanine (CuPc), tetracyanoquinodimethane (TCNQ), triphenyltetrazoliumchloride (TTC), naphthalenetetracarboxylic dianhydride (NTCDA), perylenetetracarboxylic dianhydride (PTCDA), and copper hexadecafluorophthalocyanine (F 16 CuPc).

16. The method as claimed in claim 14 , wherein the conductive layer is formed of at least one of silver, aluminum, chromium, samarium, and alloys thereof.

17. The method as claimed in claim 14 , wherein the insulation layer is formed of at least one of silicon oxide, molybdenum oxide, tungsten oxide, an organic material, and an inorganic material.

18. The method as claimed in claim 14 , wherein the auxiliary layer is formed of tungsten oxide, the conductive layer is formed of silver, and the insulation layer is formed of tungsten oxide.