IP Library Granted Patent US 8,207,020
Granted Patent B2
US 8,207,020 · App. 13/064,603 · Granted Jun 26, 2012

Semiconductor device

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Quick Facts
Patent No.
US 8,207,020
App. No.
13/064,603
Granted
Jun 26, 2012
Kind
B2
Abstract

There is provided a semiconductor device whose cost is low and whose case is restrained from breaking. In the semiconductor device having a semiconductor sensor chip, a signal processing circuit for processing signals output from the semiconductor sensor chip and a hollow case for mounting the semiconductor sensor chip and the signal processing circuit therein, the case is constructed by bonding a concave bottom member whose one end is opened with a plate-like lid member that covers the opening of the bottom member. Then, the bottom and lid members are both made of a semiconductor material and are bonded by means of anode bonding or metal bonding for example.

Claims (29)

1. A method of fabricating a semiconductor device, comprising:

preparing a first semiconductor wafer;

forming a concave portion in the first semiconductor wafer;

disposing a signal processing circuit in the concave portion;

mounting a semiconductor sensor chip on the signal processing circuit;

connecting a second semiconductor wafer that is a plate-lie member and that covers the concave portion to the first semiconductor wafer, said connecting includes bonding the second semiconductor wafer to the first semiconductor wafer to form a hollow case, the semiconductor sensor chip being mounted within the hollow case, the signal processing circuit being formed in a bottom of the concave portion and under the semiconductor sensor chip, the semiconductor sensor chip being supported on the signal processing circuit and being free of direct contact with the plate-like member; and

cutting the first semiconductor wafer and the second semiconductor wafer into individual pieces.

2. The method recited in claim 1 , wherein the signal processing circuit processes signals output from the semiconductor sensor chip.

3. The method recited in claim 1 , further comprising applying an insulating material to seal around a portion where the first semiconductor wafer is bonded with the second semiconductor wafer.

4. The method recited in claim 1 , further comprising applying a sealing material to seal around the hollow case.

5. The method recited in claim 1 , wherein the first and second semiconductor wafers are made of the same semiconductor material.

6. The method recited in claim 5 , wherein the same semiconductor material is silicon.

7. The method recited in claim 1 , wherein the concave portion is comprised of silicon.

8. The method recited in claim 7 , wherein the signal processing circuit is directly integrated within the concave portion.

9. The method recited in claim 8 , wherein the signal processing circuit is formed by one of ion-implantation, lithography, and etching of the concave portion.

10. The method recited in claim 1 , wherein an upper surface of the signal processing circuit is substantially coplanar with a bottom of the concave portion.

11. The method recited in claim 1 , wherein a bottom of the concave portion defines an upper surface of the signal processing circuit.

12. The method recited in claim 1 , wherein the second semiconductor wafer is bonded to the first semiconductor wafer using anode bonding or metal bonding.

13. The method recited in claim 1 , wherein the concave portion is formed by three-dimensional processing.

14. The method recited in claim 13 , wherein the three-dimensional processing is implemented by using silicon micro-machining technology.

15. The method recited in claim 1 , wherein said forming a concave portion includes forming a plurality of concave portions in the first semiconductor wafer, with each concave portion having a respective signal processing circuit disposed therein.

16. The method recited in claim 15 , wherein said mounting a semiconductor sensor chip includes mounting a plurality of semiconductor sensor chips, with each signal processing circuit having a respective semiconductor sensor chip thereon.

17. A method of fabricating a semiconductor device, comprising:

preparing a first semiconductor wafer;

forming a plurality of concave portions in the first semiconductor wafer;

disposing a signal processing circuit in each concave portion, so that each concave portion has a respective signal processing circuit disposed therein;

mounting a semiconductor sensor chip on a respective signal processing circuit, each signal processing circuit being formed in a bottom of respective concave portion and under a respective semiconductor sensor chip, the respective semiconductor sensor chips being supported on a corresponding signal processing circuit and being free of direct contact with the second semiconductor wafer;

connecting a second semiconductor wafer that covers the concave portion to the first semiconductor wafer; and

cutting the first semiconductor wafer and the second semiconductor wafer into individual pieces.

Assignments (2)
CHANGE OF NAME Recorded Mar 21, 2014
From: OKI SEMICONDUCTOR CO., LTD
To: LAPIS SEMICONDUCTOR CO., LTD.
Reel/Frame 032495/0483 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2011
From: INO, YOSHIHIKO; SUZUKI, TAKEHARU
To: OKI SEMICONDUCTOR CO., LTD.
Reel/Frame 027131/0462 →