Organic light emitting diode display and manufacturing method thereof
View Patent ↗An organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer on the substrate; a gate insulating layer covering the semiconductor layer; a gate electrode formed in the gate insulating layer and overlapping the semiconductor layer; a pixel electrode formed in a pixel area over the gate insulating layer; an interlayer insulating layer covering the gate electrode and the gate insulating layer, and exposing the pixel electrode through a pixel opening; a source electrode and a drain electrode formed in the interlayer insulating layer and connected to the semiconductor layer; and a barrier rib covering the interlayer insulating layer, the source electrode, and the drain electrode, and the drain electrode contacts a side wall of the pixel opening and is connected to the pixel electrode. Such an OLED display may have an improved aperture ratio.
1. An organic light emitting diode display comprising:
a substrate;
a semiconductor layer on the substrate;
a gate insulating layer covering the semiconductor layer;
a gate electrode formed in the gate insulating layer, the gate electrode overlapping the semiconductor layer;
a pixel electrode formed in a pixel area, the pixel electrode over the gate insulating layer;
an interlayer insulating layer covering the gate electrode and the gate insulating layer, the interlayer insulating layer exposing the pixel electrode through a pixel opening;
a source electrode and a drain electrode formed in the interlayer insulating layer, the source electrode and the drain electrode connected to the semiconductor layer;
a gate auxiliary member between the drain electrode and the pixel electrode; and
a barrier rib covering the interlayer insulating layer, the source electrode, and the drain electrode, wherein
the drain electrode and the gate auxiliary member contact a same side wall of the pixel opening and are connected to the pixel electrode, and
the drain electrode is electrically connected to pixel electrode through the gate auxiliary member without physically contacting the pixel electrode, the drain electrode on an upper surface of the gate auxiliary member.
2. The organic light emitting diode display as claimed in claim 1 , wherein the drain electrode is extended to the side wall of the pixel opening.
3. The organic light emitting diode display as claimed in claim 2 , wherein the gate auxiliary member is extended to the side wall of the pixel opening.
4. The organic light emitting diode display as claimed in claim 1 , wherein the gate auxiliary member follows an outer part of the pixel electrode.
5. The organic light emitting diode display as claimed in claim 1 , wherein the gate auxiliary member is made with the same material as the gate electrode.
6. The organic light emitting diode display as claimed in claim 1 , wherein the drain electrode is only connected to the pixel electrode through the gate auxiliary member.
7. The organic light emitting diode display as claimed in claim 1 , wherein the gate auxiliary member and the drain electrode are made of a same material.
8. The organic light emitting diode display as claimed in claim 1 , further comprising:
a gate driving voltage line between the pixel electrode and a first portion of the drain electrode, wherein a second portion of the drain electrode is over the gate drive voltage line.
9. The organic light emitting diode display as claimed in claim 8 , wherein an upper surface of the gate auxiliary member and an upper surface of the gate driving voltage line is substantially coplanar.
10. The organic light emitting diode display as claimed in claim 8 , wherein the gate driving voltage line is electrically separated from the drain electrode.
11. A method for manufacturing an organic light emitting diode display, the method comprising:
forming a semiconductor layer on a substrate;
forming a gate insulating layer covering the semiconductor layer;
forming a pixel electrode and a gate electrode on the gate insulating layer;
forming an interlayer insulating layer on the gate electrode and gate insulating layer, the interlayer insulating layer having a pixel opening for exposing the pixel electrode;
forming a source electrode and a drain electrode connected to the semiconductor layer through a plurality of contact holes on the interlayer insulating layer; and
forming a gate auxiliary member between the drain electrode and the pixel electrode, wherein the drain electrode and the gate auxiliary member contact a same side wall of the pixel opening and are connected to the pixel electrode, and wherein the drain electrode is electrically connected to pixel electrode through the gate auxiliary member without physically contacting the pixel electrode, the drain electrode on an upper surface of the gate auxiliary member.
12. The method as claimed in claim 11 , wherein the drain electrode is extended to the side wall of the pixel opening.
13. The method as claimed in claim 11 , wherein the drain electrode is only connected to the pixel electrode through the gate auxiliary member.
14. The method as claimed in claim 11 , wherein the gate auxiliary member and the drain electrode are made of a same material.
15. The method as claimed in claim 14 , wherein forming the drain electrode and forming the gate auxiliary member at the same side wall includes simultaneously etching the same material.