Semiconductor light receiving device and method of manufacturing the same

1. A semiconductor light receiving device, comprising:

a semiconductor substrate;

a semiconductor layer which is laminated on the semiconductor substrate and includes an upper surface portion;

a reflecting film which is formed to cover the upper surface portion of the semiconductor layer and which has at least one through hole being configured to form in the reflecting film a discontinuous loop, the reflecting film including a principal reflecting region and a peripheral reflecting region surrounding the principal reflecting region; and

an upper electrode which is formed to cover at least a portion of an upper surface of the reflecting film and includes a junction portion extending through the at least one through hole of the reflecting film to be provided in contact with the upper surface portion of the semiconductor layer, the junction portion of the upper electrode surrounding only a portion of a circumference of the principal reflecting region of the reflecting film, the principal reflecting region being connected to the peripheral reflecting region which is located outside the junction portion,

wherein the semiconductor light receiving device detects light entering from a side of the semiconductor substrate which is opposed to the semiconductor layer.

2. The semiconductor light receiving device according to claim 1 , wherein:

the principal reflecting region of the reflecting film has a circular shape; and

the junction portion of the upper electrode which is provided in contact with the circumference of the principal reflecting region has a cross section obtained by removing, from a ring-shaped region formed outside the circumference of the principal reflecting region having the circular shape, and a region extending from at least one portion of the circumference of the principal reflecting region having the circular shape to an outside.

3. The semiconductor light receiving device according to claim 2 , wherein the at least one portion of the circumference of the principal reflection region includes a first portion of the circumference of the principal reflecting region having the circular shape and a second portion of the circumference of the principal reflecting region having the circular shape, the first portion and the second portion being opposed to each other with respect to a center of the principal reflecting region having the circular shape.

4. A semiconductor light receiving device, comprising:

a semiconductor substrate;

a semiconductor layer which is laminated on the semiconductor substrate and includes an upper surface portion;

a reflecting film which is formed to cover the upper surface portion of the semiconductor layer and includes a principal reflecting region and a peripheral reflecting region surrounding the principal reflecting region; and

an upper electrode which is formed to cover at least a portion of an upper surface of the reflecting film;

wherein at least one through hole in the reflecting film is configured to partially surround the principal reflecting region of the reflecting film;

wherein the reflecting film is configured to form a shape connecting the principal reflecting region which is partially surrounded by the at least one through hole and the peripheral reflecting region outside the at least one through hole, and

wherein the upper electrode and the semiconductor layer are electrically connected through the at least one through hole.

5. The semiconductor light receiving device according to claim 4 ,

wherein the principal reflecting region is configured to form a circle,

wherein the at least one through hole is configured to form a discontinuous loop with at least one missing portion, and

wherein the principal reflecting region which is partially surrounded by the at least one through hole is connected with the peripheral reflecting region through the at least one missing portion of the at least one through hole.