InGaAsSbN photodiode arrays
View Patent ↗Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
1. A photodiode apparatus, comprising:
an indium phosphide substrate; and
a photoabsorbing region comprising at least an indium x gallium 1−x arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 350 nanometers, the InGaAsSbN layer having a strain of within 0.3 percent of a lattice match between the indium phosphide substrate and the In GaAsSbN layer, and wherein x is greater than 0.53.
2. The photodiode apparatus of claim 1 , wherein the photoabsorbing region has a cutoff wavelength greater than 1.7 microns.
3. The photodiode apparatus of claim 2 , wherein the cutoff wavelength is measured at 25 degrees celsius.
4. The photodiode apparatus of claim 3 , wherein the cutoff wavelength is less than 5 microns.
5. The photodiode apparatus of claim 1 , wherein the thickness of the InGaAsSbN layer is between 0.05 microns and 10 microns.
6. The photodiode apparatus of claim 1 , wherein the InGaAsSbN layer comprises a concentration of 0.5% to 15% of antimonide.
7. The photodiode apparatus of claim 1 , wherein the InGaAsSbN layer comprises a concentration of 0.5% to 15% of nitrogen.
8. The photodiode apparatus of claim 1 , wherein the InGaAsSbN layer comprises a concentration of 75% of indium.
9. The photodiode apparatus of claim 1 , wherein the indium phosphide substrate is substantially removed.
10. A photodiode apparatus, comprising:
an indium phosphide substrate;
a first layer region coupled to the indium phosphide; and a second layer region, coupled to the first layer region, the second layer region comprising at least an indium gallium arsenide antimonide nitride (In x Ga 1−x AsSbN) layer, the In x Ga 1−x AsSbN layer having a thickness of at least 350 nanometers and having a strain of within 0.3 percent of a lattice match between the indium phosphide substrate and the In x Ga 1−x AsSbN layer, wherein the first layer region comprises at least a layer of material with a wider bandgap than the In x Ga 1−x AsSbN layer in the second layer region, and wherein x is greater than 0.53.
11. The photodiode apparatus of claim 10 , wherein the second layer region has a cutoff wavelength greater than 1.7 microns.
12. The photodiode apparatus of claim 11 , wherein the cutoff wavelength is measured at 25 degrees celsius.
13. The photodiode apparatus of claim 12 , wherein the cutoff wavelength is less than 5 microns.
14. The photodiode apparatus of claim 10 , wherein the thickness of the InGaAsSbN layer is between 0.05 microns and 10 microns.
15. The photodiode apparatus of claim 10 , wherein the InGaAsSbN layer comprises a concentration of 0.5% to 15% of antimonide.
16. The photodiode apparatus of claim 10 , wherein the InGaAsSbN layer comprises a concentration of 0.5% to 15% of nitrogen.
17. The photodiode apparatus of claim 10 , wherein the InGaAsSbN layer comprises a concentration of 75% of indium.
18. The photodiode apparatus of claim 10 , wherein the indium phosphide substrate is substantially removed.