SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
A semiconductor integrated circuit device of the invention can reduce a manufacturing cost and achieve size reduction without degrading performances. The semiconductor integrated circuit device includes an internal circuit and at least one input/output circuit. Each input/output circuit is adapted to feed an input signal from outside to the internal circuit and to output an output signal from the internal circuit to the outside. The semiconductor integrated circuit device also includes at least one first power source terminal. Each first power source terminal is associated with each input/output circuit for supplying a drive voltage to the internal circuit. The semiconductor integrated circuit device also includes at lease one second power source terminal. Each second power source terminal is associated with each input/output circuit for supplying a drive voltage to the associated input/output circuit. The semiconductor integrated circuit device also includes at least one common ground terminal. Each common ground terminal is associated with each input/output circuit for supplying a common ground voltage to the internal circuit and the associated input/output circuit. The first power source terminal, second power source terminal and common ground terminal for each input/output circuit are arranged next to each other to define a unit terminal group.
1 . A semiconductor integrated circuit device comprising:
an internal circuit;
at least one input/output circuit, each said input/output circuit being adapted to feed an input signal from outside to the internal circuit and to output an output signal from the internal circuit to the outside;
at least one first power source terminal, each said first power source terminal being associated with each said input/output circuit for supplying a drive voltage to the internal circuit;
at lease one second power source terminal, each said second power source terminal being associated with each said input/output circuit for supplying a drive voltage to the associated input/output circuit;
at least one common ground terminal, each said common ground terminal being associated with each said input/output circuit for supplying a common ground voltage to the internal circuit and the associated input/output circuit, wherein the first power source terminal, the second power source terminal and the common ground terminal for each said input/output circuit are arranged next to each other to define a unit terminal group.
2 . The semiconductor integrated circuit device of claim 1 , wherein, for each said unit terminal group, the first power source terminal is connected to the internal circuit via a first power source cell, and the first power source cell includes at least one of a first protective circuit and a first bypass capacitor.
3 . The semiconductor integrated circuit device of claim 2 , wherein, for each said unit terminal group, the second power source terminal is connected to the associated input/output circuit via a second power source cell, and the second power source cell includes at least one of a second protective circuit and a second bypass capacitor.
4 . The semiconductor integrated circuit device of claim 3 , wherein, for each said unit terminal group, the common ground terminal is connected to the internal circuit and the associated input/output circuit via a common ground cell, the common ground cell includes at least one of a third protective circuit and a third bypass capacitor, and the first power source cell, the second power source cell and the common ground cell for each said input/output circuit define a unit cell group such that the unit cell group is located next to the corresponding unit terminal group.
5 . The semiconductor integrated circuit device of claim 1 , wherein, for each said unit terminal group, the second power source terminal is positioned between the first power source terminal and the common ground terminal in the unit terminal group.
6 . The semiconductor integrated circuit device of claim 4 , wherein, for each said unit terminal group, the second power source terminal is positioned between the first power source terminal and the common ground terminal in the unit terminal group.
7 . The semiconductor integrated circuit device of claim 1 , wherein, for each said unit terminal group, the common ground terminal is positioned between the first and second power source terminals in the unit terminal group.
8 . The semiconductor integrated circuit device of claim 4 , wherein, for each said unit terminal group, the common ground terminal is positioned between the first and second power source terminals in the unit terminal group.
9 . The semiconductor integrated circuit device of claim 1 , wherein there are provided a plurality of said input/output circuits, a plurality of said first power source terminals, a plurality of said second power source terminals, a plurality of said common ground terminals, and a plurality of said unit terminal groups in the semiconductor integrated circuit device, and a sum of the first power source terminals, the second power source terminals and the common ground terminals together with input terminals of the input/output circuit and output terminals of the input/output circuit is one hundred or less.
10 . The semiconductor integrated circuit device of claim 9 , wherein the sum of the first power source terminals, the second power source terminals and the common ground terminals together with the input terminals of the input/output circuit and the output terminals of the input/output circuit is between thirty and sixty.
11 . The semiconductor integrated circuit device of claim 1 , wherein the common ground terminal has a same width as the first power source terminal and the second power source terminal.
12 . The semiconductor integrated circuit device of claim 1 , wherein the common ground terminal has a wider width than the first power source terminal and the second power source terminal.
13 . The semiconductor integrated circuit device of claim 1 , wherein the common ground terminal has a width for connection to two bonding wires.
14 . The semiconductor integrated circuit device of claim 12 , wherein the common ground terminal has a width for connection to two bonding wires.
15 . The semiconductor integrated circuit device of claim 4 , wherein each of the first, second and third protective circuits is a circuit that deals with electrostatic discharge.