IP Library Granted Patent US 8,349,042
Granted Patent B2
US 8,349,042 · App. 13/074,046 · Granted Jan 8, 2013

Polishing liquid and polishing method

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Quick Facts
Patent No.
US 8,349,042
App. No.
13/074,046
Granted
Jan 8, 2013
Kind
B2
Abstract

The present invention relates to a polishing slurry including: a colloidal silica having an average particle size of 40 nm or more; water; and a ζ potential adjusting component, in which the ζ potential adjusting component includes at least one water-soluble organic polymer selected from a water-soluble polyether polyamine and a water-soluble polyalkylene polyamine and at least one acid selected from hydrochloric acid, sulfuric acid, nitric acid, nitrous acid and amidosulfuric acid, and the ζ potential adjusting component contains the acid at a ratio of from 0.6 to 1.4 to the water-soluble organic polymer in terms of molar ratio, and the polishing slurry has a pH of 8 or more.

Claims (17)

1. A polishing slurry, comprising:

a colloidal silica having an average particle size of 40 nm or more;

water; and

a ζ potential adjusting component,

wherein:

the ζ potential adjusting component comprises

at least one water-soluble organic polymer selected from the group consisting of a water-soluble polyether polyamine and a water-soluble polyalkylene polyamine, and

at least one acid selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, nitrous acid and amidosulfuric acid;

the ζ potential adjusting component contains the acid at a ratio of from 0.6 to 1.4 to the water-soluble organic polymer in terms of molar ratio; and

the polishing slurry has a pH of 8 or more.

2. The polishing slurry according to claim 1 , wherein a content of the water-soluble organic polymer is from 0.0001 to 0.5 mol/L.

3. The polishing slurry according to claim 1 , wherein the colloidal silica has an average particle size of from 100 nm or less.

4. The polishing slurry according to claim 1 , wherein the polishing slurry has a pH of from 9 to 10.

5. A polishing method, comprising polishing an object to be polished, with the polishing slurry according to claim 1 .

6. The polishing method according to claim 5 , further comprising, during the polishing, adjusting a ζ potential of a surface of the object to be polished to −90 mV or more.

7. The polishing method according to claim 5 , wherein the object to be polished comprises silicate glass, quartz glass or quartz, or a surface to be polished of the object to be polished comprises silicic acid or a silicate.

8. A method for manufacturing a glass substrate for a magnetic disk, said method comprising the polishing method according to claim 5 .

Assignments (2)
CORPORATE ADDRESS CHANGE Recorded Nov 9, 2011
From: ASAHI GLASS COMPANY, LIMITED
To: ASAHI GLASS COMPANY, LIMITED
Reel/Frame 027197/0541 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 29, 2011
From: MIYATANI, KATSUAKI
To: ASAHI GLASS COMPANY, LIMITED
Reel/Frame 026040/0903 →