ANTIREFLECTIVE COATING COMPOSITION AND PROCESS THEREOF
The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1): A-B—C (1) where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3) where R 1 is C 1 -C 4 alkyl and R 2 is C 1 -C 4 alkyl. The invention further relates to a process for forming an image using the composition.
1 . An antireflective coating composition comprising a crosslinker and a crosslinkable polymer, where the crosslinkable polymer comprises a unit represented by structure (1)
A-B—C (1)
where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3)
where R 1 is C 1 -C 4 alkyl and R 2 is C 1 -C 4 alkyl.
2 . The composition of claim 1 , where A has the structure (4)
3 . The composition of claim 1 , where the polymer in the composition is free of aliphatic polycyclic moieties.
4 . The composition of claim 1 , where the polymer further comprises unit (5),
5 . The composition of claim 1 , where R 1 is methyl and R 2 is methyl.
6 . The composition of claim 1 , where the fused aromatic ring has 2 to 5 aromatic rings.
7 . The composition of claim 1 , where the fused aromatic ring has 3 or 4 aromatic rings.
8 . The composition of claim 1 , where the composition further comprises an acid generator.
9 . The composition of claim 1 , where the composition further comprises a thermal acid generator.
10 . The composition of claim 1 further comprising a surfactant.
11 . The composition of claim 1 further comprising a second polymer.
12 . The composition of claim 1 further comprising a second polymer, where the second polymer is free of aliphatic polycyclics.
13 . The polymer of claim 1 having a carbon content of greater than 80 weight % by solid content.
14 . The polymer of claim 1 having a carbon content of greater than 80 weight % by solid content after heating to 400° C.
15 . A process for manufacturing a microelectronic device, comprising;
a) providing a substrate with a first layer of an antireflective coating composition from claim 1 ;
b) optionally, providing at least a second antireflective coating layer over the first antireflective coating composition layer;
b) coating a photoresist layer above the antireflective coating layers;
c) imagewise exposing the photoresist layer;
d) developing the photoresist layer with an aqueous alkaline developing solution.
16 . The process of claim 15 , where the first antireflective coating layer has k value in the range of about 0.05 to about 1.0 at 193 nm.
17 . The process of claim 15 , where the second antireflective coating comprises silicon.
18 . The process of claim 15 , where the second antireflective coating layer has k value in the range of about 0.05 to about 0.5 at 193 nm.
19 . The process of claim 15 , where the photoresist is imageable with radiation from about 240 nm to about 12 nm.
20 . The process according to claim 15 , where the developing solution is an aqueous solution comprising a hydroxide base.