Optoelectronic devices and coatings therefore

1. An optoelectronic device assembly comprising:

a coated element comprising

transparent thermoplastic substrate comprising a material selected from the group consisting of aromatic polycarbonate and polyester, and combinations comprising at least one of the foregoing materials, and

a protective weathering layer having UV absorbance loss rate at 330 nm of less than or equal to 0.15 A/year as estimated from filtered xenon arc exposure and/or having a rate of erosion of less than or equal to 5 μm per year as estimated from filtered xenon arc exposure; and

an optoelectronic device on the coated element, wherein the optoelectronic device is selected from the group consisting of a light emitting diode and a photovoltaic cell.

2. The assembly of claim 1 , wherein the protective weathering layer comprises a UV absorbers selected from the group consisting of 4,6-dibenzoylresorcinol, silylated 4,6-dibenzoylresorcinols, 2,4-diphenyl-6-(2′-hydroxy-4′ alkoxyphenyl)-1,3,5-triazines, and combinations comprising at least one of the foregoing.

3. The assembly of claim 2 , wherein the protective weathering layer further comprises a matrix selected from the group consisting of silicone, poly(meth)acrylates, and combinations comprising at least one of the foregoing.

4. The assembly of claim 1 , wherein the protective weathering layer comprises resorcinol polyarylate.

5. The assembly of claim 1 , further comprising a barrier coating layer comprising at least one zone substantially organic in composition and at least one zone substantially inorganic in composition.

6. The assembly of claim 1 , further comprising a UV-cured acrylic-colloidal silica coating layer.

7. The assembly of claim 1 , further comprising a planarizing layer selected from the group consisting of an epoxy based resin, an acrylic based resin, a silicone resin, and a combination comprising at least one of the foregoing.

8. The assembly of claim 7 , wherein the planarizing layer has a thickness of 1 nm to 100 μm.

9. The assembly of claim 1 , wherein the protective weathering layer comprises triazine of the formula:

wherein R 1 ═H, R 2 , R 3 =independently H, aliphatic C 1 -C 12 , cycloaliphatic C 3 -C 12 , or aromatic, R 4 ═H, C 1 -C 24 aliphatic, or C 3 -C 24 cycloaliphatic.

10. The assembly of claim 9 , wherein R 1 , R 2 , and R 3 ═H.

11. The assembly of claim 10 , wherein R 4 ═C 6 H 13 .

12. The assembly of claim 10 , wherein R 4 ═CH 2 CH 2 OOCC 7 H 15 .

13. The assembly of claim 1 , wherein the protective weathering layer comprises dibenzoylresorcinol of the formula:

wherein R 5 ═H, aliphatic C 1 -C 12 , cycloaliphatic C 3 -C 12 , CH 2 CH 2 CH 2 SiR n (OR 8 ) 3-n , n=0-2, R 8 ═H, aliphatic C 1 -C 12 ; and R 6 , R 7 =independently H, aliphatic C 1 -C 12 , cycloaliphatic C 3 -C 12 , or aromatic.

14. The assembly of claim 13 , wherein R 5 , R 6 , and R 7 ═H.

15. The assembly of claim 1 , wherein the protective weathering layer comprises dibenzoylresorcinol of the formula:

wherein R 9 , R 10 , R 11 , R 12 are independently H, aliphatic C 1 -C 12 , cycloaliphatic C 3 -C 12 , or aromatic.

16. An optoelectronic device assembly comprising:

a coated element, comprising

transparent thermoplastic substrate comprising a material selected from the group consisting of aromatic polycarbonate and polyester, and combinations comprising at least one of the foregoing materials,

a protective weathering layer having UV absorbance loss rate at 330 nm of less than or equal to 0.15 A/year as estimated from filtered xenon arc exposure and/or having a rate of erosion of less than or equal to 5 μm per year as estimated from filtered xenon arc exposure; and

a primer located between the weathering layer and the substrate;

an optoelectronic device on the coated element, wherein the optoelectronic device is selected from the group consisting of a light emitting diode and a photovoltaic cell; and

an adhesive located between the optoelectronic device and the substrate.

17. An optoelectronic device assembly comprising:

a coated element comprising

transparent thermoplastic substrate comprising a material selected from the group consisting of aromatic polycarbonate and polyester, and combinations comprising at least one of the foregoing materials, and

a protective weathering layer comprising a block copolymer comprising resorcinol polyarylate and polycarbonate, and wherein the block copolymer has a resorcinol polyarylate block content of greater than or equal to 80 wt % and without an additional UV absorber; and

an optoelectronic device on the coated element, wherein the optoelectronic device is selected from the group consisting of a light emitting diode and a photovoltaic cell.

18. An optoelectronic device assembly comprising:

a coated element comprising

transparent thermoplastic substrate comprising a material selected from the group consisting of aromatic polycarbonate and polyester, and combinations comprising at least one of the foregoing materials, and

a protective weathering layer comprising polycarbonate and greater than or equal to 7 wt % UV absorber; and

an optoelectronic device on the coated element, wherein the optoelectronic device is selected from the group consisting of a light emitting diode and a photovoltaic cell.

19. The assembly of claim 18 , wherein the UV absorber comprises triazine.

20. The assembly of claim 19 , wherein the UV absorber comprises diphenyltriazine.

21. The assembly of claim 19 , wherein the protective weathering layer comprises triazine of the formula:

wherein R 1 ═H, R 2 , R 3 =independently H, aliphatic C 1 -C 12 , cycloaliphatic C 3 -C 12 , or aromatic, R 4 ═H, C 1 -C 24 aliphatic, or C 3 -C 24 cycloaliphatic.

22. The assembly of claim 21 , wherein R 1 , R 2 , and R 3 ═H.

23. The assembly of claim 22 , wherein R 4 ═C 6 H 13 .

24. The assembly of claim 22 , wherein R 4 ═CH 2 CH 2 OOCC 7 H 15 .

25. The assembly of claim 4 , wherein the protective weathering layer comprises a block copolymer comprising polycarbonate and the resorcinol polyarylate.