Nonlinear resistor ceramic composition and electronic component
View Patent ↗A nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 to less than 30 at. % of oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and does not include Al, Ga and In. Alternatively, a nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 at. % and less than 30 at. % of an oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and more than 0.01 to less than 10 at. % of calcium zirconate in terms of CaZrO 3 . By the present invention, deviations of various characteristics can be made small and grain growth of grains is suppressed with lowering CV product.
1. A nonlinear resistor ceramic composition comprising:
a zinc oxide as a main component; and
as subcomponents, with respect to 100 mol of said zinc oxide,
an amount of from more than 0.05 at. % to less than 30 at. % of an oxide of Co in terms of Co;
an amount of from more than 0.05 at. % to less than 20 at. % of an oxide of Sr in terms of Sr;
an amount of from not less than 0.1 at. % and not more than 5 at. % of an oxide of R in terms of R, where R is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and
an amount of from 0.05 at. % to 0.5 at. % of an oxide of Si in terms of Si,
wherein the nonlinear resistor ceramic composition does not comprise Al, Ga, and In,
the nonlinear resistor ceramic composition is used for a nonlinear resistor layer of a multilayer chip varistor having at least one pair of internal electrode layers,
a varistor voltage of the nonlinear resistor ceramic composition is 100V or less, and
the nonlinear resistor ceramic composition is a semiconductor.
2. A nonlinear resistor ceramic composition comprising:
a zinc oxide as a main component; and
as subcomponents, with respect to 100 mol of said zinc oxide,
an amount of from more than 0.05 at. % to less than 30 at. % of an oxide of Co in terms of Co;
an amount of from more than 0.05 at. % to less than 20 at. % of an oxide of Sr in terms of Sr;
an amount of from more than 0.01 at. % to less than 20 at. % of an oxide of R in terms of R, where R is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu;
an amount of from more than 0.01 at. % to less than 10 at. % of an oxide of Si in terms of Si; and
an amount of from more than 0.01 at. % to less than 10 at. % of calcium zirconate in terms of CaZrO 3 ,
wherein the nonlinear resistor ceramic composition is used for a nonlinear resistor layer of a multilayer chip varistor having at least one pair of internal electrode layers,
a varistor voltage of the nonlinear resistor ceramic composition is 100V or less, and
the nonlinear resistor ceramic composition is a semiconductor.
3. An electronic component comprising a nonlinear resistor layer constituted by the nonlinear resistor ceramic composition as set forth in claim 1 .
4. An electronic component comprising a nonlinear resistor layer constituted by the nonlinear resistor ceramic composition as set forth in claim 2 .
5. A chip varistor comprising a nonlinear resistor layer, wherein the nonlinear resistor layer comprises the nonlinear resistor ceramic composition as set forth in claim 1 .
6. A chip varistor comprising a nonlinear resistor layer, wherein the nonlinear resistor layer comprises the nonlinear resistor ceramic composition as set forth in claim 2 .