Layer system with at least one mixed crystal layer of a multi-oxide
View Patent ↗A PVD layer system for the coating of workpieces encompasses at least one mixed-crystal layer of a multi-oxide having the following composition: (Me1 1-x Me2 x ) 2 O 3 , where Me1 and Me2 each represent at least one of the elements Al, Cr, Fe, Li, Mg, Mn, Nb, Ti, Sb or V. The elements of Me1 and Me2 differ from one another. The crystal lattice of the mixed-crystal layer in the PVD layer system has a corundum structure which in an x-ray diffractometrically analyzed spectrum of the mixed-crystal layer is characterized by at least three of the lines associated with the corundum structure. Also disclosed is a vacuum coating method for producing a mixed-crystal layer of a multi-oxide, as well as correspondingly coated tools and components.
1. A vacuum coating method for producing a mixed-crystal layer of a multi-oxide on a workpiece, comprising the steps of:
depositing a coating on the workpiece with a first arc- or sputtering-source electrode, constituting an alloy target, and a second electrode in an oxygenous process-gas atmosphere; and
simultaneously feeding said source electrode with a direct current or direct voltage as well as a pulsed or alternating current or a pulsed or alternating-current voltage,
characterized in that composition of the alloy target essentially corresponds to that of the mixed-crystal layer and that the latter is deposited with a corundum structure by arc evaporating the alloy target,
wherein said mixed-crystal layer of said multi-oxide comprises areas of at least one element of said alloy target.
2. Method as in claim 1 , characterized in that the composition of the metals in the mixed-crystal layer, when scaled to the total metal content, does not differ for the respective constituent metals by more than 10 at % from the concentrations in the target composition.
3. Method as in claim 2 , characterized in that the composition does not differ by not more than 5 at % from the concentrations in the target composition.
4. Method as in claim 2 , characterized in that the composition does not differ by not more than 3 at % from the concentrations in the target composition.
5. Method as in claim 1 , characterized in that the source is an arc source and that the second electrode is separated from the arc source or constitutes the anode of the arc source.
6. Method as in claim 5 , characterized in that both electrodes are connected to and powered by a single pulsed-current power supply.
7. Method as in claim 6 , characterized in that the second electrode serves as the cathode of another arc vaporizing source which latter as well is connected to and powered by a DC power supply.
8. Method as in claim 6 , characterized in that the second electrode serves as the cathode of a sputtering source, which latter as well is connected to and powered by a power supply.
9. Method as in claim 8 , characterized in that the sputtering source is a magnetron source.
10. Method as in claim 8 , characterized in that the power supply is a DC power supply.
11. Method as in claim 6 , characterized in that the second electrode is in the form of an evaporation crucible and is powered as the anode of a low voltage arc evaporator.
12. Method as in claim 7 , characterized in that the DC power supply and the pulsed current supply are decoupled by means of an electrical decoupling filter.
13. Method as in claim 12 , characterized in that the electrical decoupling filter contains at least one hold-off diode.
14. Method as in claim 7 , characterized in that the DC power supply is operated with a base current in a manner whereby the plasma discharge at the sources is maintained in an essentially continuous mode.
15. Method as in claim 14 , characterized in that the sources are the arc evaporation sources.
16. Method as in claim 1 , characterized in that the pulsed current or pulsed voltage power supply is operated with pulse edges whose pulse slopes are steeper than 2.0 V/ns, leading to a high-power discharge.
17. Method as in claim 16 , characterized in that the pulse slopes are at least in the range from 0.02 V/ns to 2.0 V/ns.
18. Method as in claim 16 , characterized in that the pulse slopes are at least in the range from 0.1 V/ns to 1.0 V/ns.
19. Method as in claim 1 , characterized in that the pulsed current power supply is operated at a frequency in the range from 1 kHz to 200 kHz.
20. Method as in claim 1 , characterized in that the pulsed current power supply is operated with a varying pulse-width ratio setting.
21. Method as in claim 1 , characterized in that a pulsed magnetic field is applied on at least one arc source.
22. Method as in claim 21 , characterized in that the magnetic field is pulsed by the pulsed current or by part of the pulsed current of the arc source.
23. Method as in claim 1 , characterized in that at least one arc source is either not cooled or is heated.
24. Method as in claim 1 , characterized in that the sources are operated with a process gas that has at least 80% of oxygen.
25. Method as in claim 24 , characterized in that the process gas has 90% of oxygen.
26. Method as in claim 24 , characterized in that the process gas consists 100% of oxygen.
27. Method as in claim 1 , characterized in that the coating temperature is set below 650° C.
28. Method as in claim 27 , characterized in that the coating temperature is set below 550° C.