Insulated conductor heaters with semiconductor layers
A heater used to heat a subsurface formation includes an electrical conductor, a semiconductor layer at least partially surrounding the electrical conductor, an insulation layer at least partially surrounding the electrical conductor, an electrically conductive sheath at least partially surrounding the insulation layer. The heater may be located in an opening in the subsurface formation.
1. A heater configured to heat a subsurface formation, comprising:
an electrical conductor;
a semiconductor layer at least partially surrounding the electrical conductor;
an insulation layer at least partially surrounding the electrical conductor, wherein the semiconductor layer has a higher dielectric constant than the insulation layer; and
an electrically conductive sheath at least partially surrounding the insulation layer;
wherein the heater is configured to provide resistive heat output to heat at least a portion of the subsurface formation.
2. The heater of claim 1 , wherein the semiconductor layer is located inside the insulation layer.
3. The heater of claim 1 , wherein the semiconductor layer is at least partially surrounded by the insulation layer.
4. The heater of claim 1 , wherein the insulation layer at least partially surrounds the semiconductor layer.
5. The heater of claim 1 , wherein the semiconductor layer is configured to reduce the electrical field in the electrical conductor during use.
6. The heater of claim 1 , wherein the semiconductor layer is configured to reduce electrical stresses on the insulation layer during use.
7. The heater of claim 1 , wherein the insulation layer comprises magnesium oxide.
8. The heater of claim 1 , wherein the semiconductor layer comprises a plurality of semiconductor layers with varying dielectric constants.
9. The heater of claim 1 , wherein the semiconductor layer comprises multiple semiconductor layers with different dielectric constants that are graded to provide a dielectric constant in the semiconductor layer that varies with radial distance from a central axis of the electrical conductor.
10. The heater of claim 1 , further comprising an additional semiconductor layer on an opposite side of the insulation layer from the semiconductor layer.
11. The heater of claim 1 , wherein the heater is located in an opening in a hydrocarbon containing layer in the subsurface formation.
12. The heater of claim 1 , wherein the heater is located in a hydrocarbon containing layer in the subsurface formation, and the heater is configured to provide resistive heat output to heat at least a portion of the subsurface formation to mobilize hydrocarbons in the layer.
13. The heater of claim 1 , wherein the heater is located in a hydrocarbon containing layer in the subsurface formation, and the heater is configured to provide resistive heat output to heat at least a portion of the subsurface formation to pyrolyze hydrocarbons in the layer.
14. A method for heating a subsurface formation, comprising:
providing heat to at least a portion of a hydrocarbon containing layer of the formation from a heater at least partially located in an opening in the hydrocarbon containing layer, the opening extending from the surface of the formation through an overburden section of the formation and into the hydrocarbon containing layer of the formation, the heater comprising:
an electrical conductor;
a plurality of semiconductor layers at least partially surrounding the electrical conductor, wherein the semiconductor layers comprise different dielectric constants to provide a graded dielectric constant that varies with radial distance from a central axis of the electrical conductor;
an insulation layer at least partially surrounding the electrical conductor; and
an electrically conductive sheath at least partially surrounding the insulation layer;
allowing heat to transfer to the formation such that at least some hydrocarbons in the formation are mobilized; and
producing at least some of the mobilized hydrocarbons from the formation.
15. The method of claim 14 , wherein the semiconductor layers are located inside the insulation layer.
16. The method of claim 14 , wherein the semiconductor layers are at least partially surrounded by the insulation layer.
17. The method of claim 14 , wherein the insulation layer at least partially surrounds the semiconductor layers.
18. The method of claim 14 , wherein the semiconductor layers have higher dielectric constants than the insulation layer.
19. A heater configured to heat a subsurface formation, comprising:
an electrical conductor;
a semiconductor layer at least partially surrounding the electrical conductor, wherein the semiconductor layer comprises a plurality of semiconductor layers with varying dielectric constants;
an insulation layer at least partially surrounding the electrical conductor, wherein the semiconductor layer has a higher dielectric constant than the insulation layer; and
an electrically conductive sheath at least partially surrounding the insulation layer.
20. The heater of claim 19 , wherein the heater is located in an opening in a hydrocarbon containing layer in the subsurface formation.