Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.
1. A method comprising:
providing a porous substrate; and
growing one or more nanowires on at least a portion of the porous substrate from catalysts using vapor deposition.
2. The method of claim 1 , wherein at least some of the nanowires comprise a semiconductor.
3. The method of claim 1 , wherein at least some of the nanowires comprise silicon.
4. The method of claim 1 , wherein the porous substrate comprises a porous membrane.
5. The method of claim 1 , wherein the porous substrate comprises porous silicon.
6. The method of claim 1 , wherein the porous substrate comprises anodic alumnia.
7. The method of claim 1 , wherein the porous substrate comprises a polymer.
8. The method of claim 1 , wherein at least some of the nanowires are made from a solution phase source material.
9. The method of claim 1 , wherein at least some of the nanowires are made from a vapor phase source material.
10. The method of claim 1 , wherein at least some of the nanowires have a diameter ranging from about 0.5 nm to about 200 nm.
11. The method of claim 1 , wherein at least some of the nanowires are doped.
12. The method of claim 1 , wherein at least some of the nanowires are able to exhibit a first value of an electrical property at a first point in time, and a second, different value of the electronic property at a second, different point in time.
13. The method of claim 1 , wherein at least some of the nanowires are able to exhibit a first electrical charge at a first point in time and a second, different electrical charge at a second, different point in time.
14. The method of claim 1 , wherein at least some of the nanowires are able to exhibit a first voltage at a first point in time and a second, different voltage at a second, different point in time.