SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
Provided is a solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
1 . A solid-state imaging device comprising
an imaging area where a plurality of unit pixels are disposed to capture a color image,
wherein each of the unit pixels includes:
a plurality of photoelectric conversion portions;
a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and
a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates,
wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and
wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
2 . The solid-state imaging device according to claim 1 ,
wherein the unit pixel is configured so that the floating diffusions are interposed by the plurality of the photoelectric conversion portions and so that the plurality of the transfer gates are disposed between the plurality of the photoelectric conversion portions and the floating diffusions.
3 . The solid-state imaging device according to claim 2 ,
wherein a plurality of the unit pixels are arrayed in a first direction and a second direction perpendicular to the first direction in the imaging area,
wherein the floating diffusions are disposed so as to be interposed by the plurality of the photoelectric conversion portions in the first direction, and
wherein the plurality of the transfer gates are disposed so as to be interposed between the plurality of the photoelectric conversion portions and the floating diffusions in the first direction.
4 . The solid-state imaging device according to claim 2 ,
wherein a plurality of the unit pixels are arrayed in a first direction and a second direction perpendicular to the first direction in the imaging area,
wherein the floating diffusions are disposed so as to be interposed by the plurality of the photoelectric conversion portions in a direction slanted with respect to the first direction and the second direction, and
wherein the plurality of the transfer gates are disposed so as to be interposed between the plurality of the photoelectric conversion portions and the floating diffusions in the direction slanted with respect to the first direction and the second direction.
5 . The solid-state imaging device according to claim 3 or 4 , wherein the plurality of the photoelectric conversion portions are arrayed in the unit pixel so that the same number of the photoelectric conversion portions are aligned in each of the first direction and second direction.
6 . The solid-state imaging device according to claim 5 , wherein the plurality of the photoelectric conversion portions are arrayed so that an even number of the photoelectric conversion portions are aligned in each of the first direction and the second direction.
7 . The solid-state imaging device according to claim 6 , wherein the plurality of the photoelectric conversion portions are arrayed so that multiples of the four photoelectric conversion portions are aligned in each of the first direction and the second direction.
8 . The solid-state imaging device according to claim 2 ,
wherein the unit pixel includes:
an amplification transistor of which the gate is electrically connected to the floating diffusion; and
a vertical signal line which outputs a signal obtained from the signal charges transferred to the floating diffusion,
wherein a plurality of the amplification transistors are disposed in the unit pixel,
wherein a plurality of the vertical signal lines are disposed, and the plurality of the vertical signal lines are electrically connected to each other, and
wherein the signal output from the plurality of the vertical signal lines are smoothed.
9 . The solid-state imaging device according to claim 2 ,
wherein the unit pixel includes:
an amplification transistor of which the gate is electrically connected to the floating diffusion; and
a vertical signal line which outputs a signal obtained from the signal charges transferred to the floating diffusion, and
wherein a plurality of the amplification transistors are disposed in the unit pixel, and the sources of the plurality of the amplification transistors are electrically connected to a common vertical signal line.
10 . The solid-state imaging device according to claim 1 ,
wherein the unit pixel includes a microlens which focuses light on the photoelectric conversion portion, and
wherein a plurality of the microlenses are disposed corresponding to the plurality of the photoelectric conversion portions.
11 . The solid-state imaging device according to claim 1 ,
wherein the unit pixel includes an optical waveguide which guides light to the photoelectric conversion portion, and
wherein a plurality of the optical waveguides are disposed corresponding to the plurality of the photoelectric conversion portions.
12 . A method of manufacturing a solid-state imaging device comprising the step of forming the solid-state imaging device by disposing a plurality of unit pixels in an imaging area which captures a color image,
wherein the step of forming the unit pixel includes the steps of:
forming a plurality of photoelectric conversion portions which receive light of the same color to generate signal charges;
disposing a plurality of transfer gates, which transfer the signal charges from the photoelectric conversion portions, in the plurality of the photoelectric conversion portions; and
forming a floating diffusion to which signal charges from the plurality of the photoelectric conversion portions are transferred through the plurality of the transfer gates to be added.
13 . An electronic apparatus having a solid-state imaging device comprising
an imaging area where a plurality of unit pixels are disposed to capture a color image,
wherein each of the unit pixels includes:
a plurality of photoelectric conversion portions;
a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and
a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates,
wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and
wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.