Electrochemical device and manufacturing method thereof, circuit board and housing tray
View Patent ↗A lead 3 of an electrochemical device includes a lead body 3 A containing Al, and a bent metallic thin film 3 a provided to a tip part of the lead body 3 A. The metallic thin film 3 a includes a thin film body 3 a 1 containing Ni, and a plating layer 3 a 2 containing Sn and covering at least an outer surface of the bent thin film body 3 a 1 . A specific area of an inner surface of the bent thin film body 3 a 1 and a surface of the lead body 3 A are welded in a predetermined area without the plating layer 3 a 2 being disposed there between.
1. An electrochemical device including a charger/discharger housed in an outer package, and a lead extending from the charger/discharger, wherein
the lead has:
a lead body containing Al; and
a metallic thin film which is provided to a tip part of the lead body, and which is bent at a side face position of the lead body as a boundary, and covers upper and lower faces and a side face of the lead body, the metallic thin film having at least one first portion and a second portion, the second portion including the side face of the lead body, the at least one first portion being welded to the lead body and the second portion not being welded to the lead body,
the metallic thin film includes:
a thin film body containing Ni; and
a plating layer containing Sn and covering at least an outer surface of the bent thin film body, and wherein
the plating layer not being disposed between the metallic thin film and the lead body.
2. The electrochemical device according to claim 1 , wherein the metallic thin film is welded to both the upper and lower faces of the lead body.
3. The electrochemical device according to claim 1 , wherein the plating layer is formed along a longitudinal direction of the thin film body on an inner surface of the thin film body in the vicinity of opposite end positions of the bent metallic thin film in a bending axis direction.
4. The electrochemical device according to claim 3 , wherein a thickness of the plating layer is 0.5 μm or more and 10 μm or less.
5. The electrochemical device according to claim 4 , wherein a thickness of the thin film body is 50 μm or more and 500 μm or less.
6. The electrochemical device according to claim 1 , wherein a dimension of the bent metallic thin film in a longitudinal direction of the lead is 1 mm or more.
7. The electrochemical device according to claim 1 , wherein the plating layer contains 98±1 (mass %) of Sn and 2±1 (mass %) of Cu.
8. The electrochemical device according to claim 1 , wherein a width of the metallic thin film is greater than a width of the lead body.
9. A circuit board, comprising:
the electrochemical device according to claim 1 ;
a substrate on which the electrochemical device is mounted and which has an electrode pad;
a double-sided adhesive tape which is interposed between a rear face of the outer package and the substrate; and
a solder material which is interposed between the electrode pad and the metallic thin film, and which reaches an outer upper face of the metallic thin film.
10. The circuit board according to claim 9 , wherein the solder material contains Sn and Cu.
11. An electrochemical device including a charger/discharger housed in an outer package, and a lead extending from the charger/discharger, wherein
the lead has:
a lead body containing Al; and
a metallic thin film which is provided to a tip part of the lead body, and which is bent at a side face position of the lead body as a boundary and covers upper and lower faces and a side face of the lead body, the metallic thin film having at least one first portion and a second portion, the second portion including the side face of the lead body, the at least one first portion being welded to the lead body and the second portion not being welded to the lead body,
the metallic thin film includes:
a thin film body containing Ni; and
a plating layer containing Sn and covering at least an outer surface of the bent thin film body, and wherein
the plating layer not being disposed between the metallic thin film and the lead body, and a lower face of the lead body is not welded to the second portion of the metallic thin film.
12. The electrochemical device according to claim 11 , wherein the plating layer is formed along a longitudinal direction of the thin film body on an inner surface of the thin film body in the vicinity of opposite end positions of the bent metallic thin film in a bending axis direction.
13. The electrochemical device according to claim 12 , wherein a thickness of the plating layer is 0.5 μm or more and 10 μm or less.
14. The electrochemical device according to claim 13 , wherein a thickness of the thin film body is 50 μm or more and 500 μm or less.
15. The electrochemical device according to claim 11 , wherein a dimension of the bent metallic thin film in a longitudinal direction of the lead is 1 mm or more.
16. The electrochemical device according to claim 11 , wherein the plating layer contains 98±1 (mass %) of Sn and 2±1 (mass %) of Cu.
17. The electrochemical device according to claim 11 , wherein a width of the metallic thin film is greater than a width of the lead body.
18. A circuit board, comprising:
the electrochemical device according to claim 11 ;
a substrate on which the electrochemical device is mounted and which has an electrode pad;
a double-sided adhesive tape which is interposed between a rear face of the outer package and the substrate; and
a solder material which is interposed between the electrode pad and the metallic thin film, and which reaches an outer upper face of the metallic thin film.
19. The circuit board according to claim 18 , wherein the solder material contains Sn and Cu.
20. An electrochemical device including a charger/discharger housed in an outer package, and a lead extending from the charger/discharger, wherein the lead has:
a lead body containing Al; and
a metallic thin film which is provided to a tip part of the lead body, and which is bent into a curved shape at a side face position of the lead body as a boundary so as to form a gap between a side face of the lead body and the metallic thin film, and moreover which covers upper and lower faces and a side face of the lead body, and in which a predetermined area is welded to the lead body,
the metallic thin film includes:
a thin film body containing Ni; and
a plating layer containing Sn and covering at least an outer surface of the bent thin film body, and wherein
a specific area of an inner surface of the bent thin film body and a surface of the lead body are directly in contact and welded in the predetermined area without the plating layer being disposed therebetween.
21. The electrochemical device according to claim 20 , wherein a distance of the gap between the metallic thin film and the side face of the lead body is 0.1 mm or more and 2 mm or less.
22. The electrochemical device according to claim 20 , wherein the metallic thin film is welded to both the upper and lower faces of the lead body.
23. The electrochemical device according to claim 20 , wherein the plating layer is formed along a direction that is perpendicular to a bending axis direction of the thin film body on an inner surface of the thin film body in the vicinity of opposite end positions of the bent metallic thin film in the bending axis direction.
24. The electrochemical device according to claim 23 , wherein a thickness of the plating layer is 0.5 μm or more and 10 μm or less.
25. The electrochemical device according to claim 24 , wherein a thickness of the thin film body is 50 μm or more and 500 μm or less.
26. The electrochemical device according to claim 20 , wherein a dimension of the bent metallic thin film in a longitudinal direction of the lead is 1 mm or more.
27. The electrochemical device according to claim 20 , wherein the plating layer contains 98±1 (mass %) of Sn and 2±1 (mass %) of Cu.
28. The electrochemical device according to claim 20 , wherein a width of the metallic thin film is greater than a width of the lead body.
29. A circuit board, comprising:
the electrochemical device according to claim 20 ;
a substrate on which the electrochemical device is mounted and which has an electrode pad;
a double-sided adhesive tape which is interposed between a rear face of the outer package and the substrate; and
a solder material which is interposed between the electrode pad and the metallic thin film, and which reaches an outer surface of the metallic thin film.
30. The circuit board according to claim 29 , wherein the solder material contains Sn and Cu.
31. An electrochemical device including a charger/discharger housed in an outer package, and a lead extending from the charger/discharger, wherein
the lead has:
a lead body containing Al; and
a metallic thin film which is provided to a tip part of the lead body, and is bent so as to cover a lower face and a side face of the lead body, the metallic thin film having at least one first portion and a second portion, the second portion including the side face of the lead body, the at least one first portion being welded to the lead body and the second portion not being welded to the lead body,
the metallic thin film includes:
a thin film body containing Ni; and
a plating layer containing Sn and covering at least an outer surface of the bent thin film body,
the plating layer not being disposed between the metallic thin film and the lead body, and wherein
the lead is bent so as to incline in an obliquely downward direction from a position which is in contact with the outer package.
32. The electrochemical device according to claim 31 , wherein the lead is bent so that a tip thereof is positioned lower than a plane extending from a bottom face of the outer package.
33. The electrochemical device according to claim 31 , wherein an inclination angle of the lead relative to a plane that is parallel to a bottom face of the outer package is 10° to 80°.
34. The electrochemical device according to claim 31 , wherein the plating layer is formed along a direction that is perpendicular to a bending axis direction of the thin film body on an inner surface of the thin film body in the vicinity of opposite end positions of the bent metallic thin film in the bending axis direction.
35. The electrochemical device according to claim 34 , wherein a thickness of the plating layer is 0.5 μm or more and 10 μm or less.
36. The electrochemical device according to claim 35 , wherein a thickness of the thin film body is 50 μm or more and 500 μm or less.
37. The electrochemical device according to claim 31 , wherein a dimension of the bent metallic thin film in a longitudinal direction of the lead is 1 mm or more.
38. The electrochemical device according to claim 31 , wherein the plating layer contains 98±1 (mass %) of Sn and 2±1 (mass %) of Cu.
39. A circuit board, comprising:
the electrochemical device according to claim 31 ;
a substrate on which the electrochemical device is mounted and which has an electrode pad;
a double-sided adhesive tape which is interposed between a rear face of the outer package and the substrate; and
a solder material which is interposed between the electrode pad and the metallic thin film, and which reaches an outer surface of the metallic thin film.
40. The circuit board according to claim 39 , wherein the solder material contains Sn and Cu.
41. A housing tray for housing the electrochemical device according to claim 31 , comprising:
a body housing part for housing a charger/discharger housed in an outer package; and
a lead housing part including an inclined plane extending at an angle from the body housing part in an obliquely downward direction.