Polycrystalline diamond compacts including at least one transition layer and methods for stress management in polycrsystalline diamond compacts
View Patent ↗Embodiments relate to polycrystalline diamond compacts (“PDCs”) that are less susceptible to liquid metal embrittlement damage due to the use of at least one transition layer between a polycrystalline diamond (“PCD”) layer and a substrate. In an embodiment, a PDC includes a PCD layer, a cemented carbide substrate, and at least one transition layer bonded to the substrate and the PCD layer. The at least one transition layer is formulated with a coefficient of thermal expansion (“CTE”) that is less than a CTE of the substrate and greater than a CTE of the PCD layer. At least a portion of the PCD layer includes diamond grains defining interstitial regions and a metal-solvent catalyst occupying at least a portion of the interstitial regions. The diamond grains and the catalyst collectively exhibit a coercivity of about 115 Oersteds or more and a specific magnetic saturation of about 15 Gauss·cm 3 /grams or less.
1. A polycrystalline diamond compact, comprising:
at least one polycrystalline diamond layer, at least a portion of the at least one polycrystalline diamond layer including:
a plurality of diamond grains exhibiting an average diamond grain size of 30 μm or less and defining a plurality of interstitial regions;
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) or more; and
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 15 Gauss·cm 3 /grams (“G·cm 3 /g”) or less;
a cemented carbide substrate; and
at least one transition layer disposed between and bonded to the cemented carbide substrate and the at least one polycrystalline diamond layer, the at least one transition layer exhibiting a coefficient of thermal expansion (“CTE”) that is less than a CTE of the cemented carbide substrate and greater than a CTE of the at least one polycrystalline diamond layer.
2. The polycrystalline diamond compact of claim 1 wherein the CTE of the at least one transition layer is about 2 to about 5 times the CTE of the at least one polycrystalline diamond layer.
3. The polycrystalline diamond compact of claim 1 wherein the at least one transition layer includes a plurality of diamond grains and at least one additive cemented together with a binder.
4. The polycrystalline diamond compact of claim 3 wherein the at least one additive comprises at least one member selected from the group consisting of tungsten carbide, chromium carbide, and cubic boron nitride.
5. The polycrystalline diamond compact of claim 3 wherein the at least one additive comprises about 20 volume % to about 80 volume % of the at least one transition layer.
6. The polycrystalline diamond compact of claim 3 wherein the at least one additive comprises about 3 volume % to about 10 volume % of the at least one transition layer.
7. The polycrystalline diamond compact of claim 5 wherein the at least one transition layer comprises a 20 volume % to about 80 volume % diamond grains and about 1 weight % to about 7 weight % metal-solvent catalyst.
8. The polycrystalline diamond compact of claim 3 wherein the at least one polycrystalline diamond layer is substantially free of the at least one additive.
9. The polycrystalline diamond compact of claim 3 wherein at least some of the diamond grains of the at least one transition layer exhibit diamond-to-diamond bonding.
10. The polycrystalline diamond compact of claim 3 wherein the diamond grains of the at least one transition layer exhibit substantially no diamond-to-diamond bonding.
11. The polycrystalline diamond compact of claim 1 wherein the cemented-carbide substrate comprises cobalt-cemented tungsten carbide.
12. The polycrystalline diamond compact of claim 1 wherein the coercivity of the at least one polycrystalline diamond layer is about 115 Oe to about 250 Oe.
13. The polycrystalline diamond compact of claim 1 wherein the specific magnetic saturation of the at least one polycrystalline diamond layer is about 5 G·cm 3 /g to about 15 G·cm 3 /g.
14. The polycrystalline diamond compact of claim 1 wherein the plurality of diamond grains and the metal-solvent catalyst of the at least one polycrystalline diamond layer collectively exhibit a specific permeability less than about 0.10 G·cm 3 /Oe·g.
15. The polycrystalline diamond compact of claim 1 wherein the plurality of diamond grains and the metal-solvent catalyst of the at least one polycrystalline diamond layer collectively exhibit a specific permeability of about 0.060 G·cm 3 /Oe·g to about 0.090 G·cm 3 /Oe·g.
16. The polycrystalline diamond compact of claim 1 wherein the coercivity of the at least one polycrystalline diamond layer is about 130 Oe to about 160 Oe, and the specific magnetic saturation of the at least one polycrystalline diamond layer is about 10 G·cm 3 /g to about 15 G·cm 3 /g.
17. A rotary drill bit, comprising:
a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and
a plurality of cutting elements mounted to the blades, at least one of the cutting elements including a polycrystalline diamond compact including:
at least one polycrystalline diamond layer, at least a portion of the at least one polycrystalline diamond layer including:
a plurality of diamond grains exhibiting an average diamond grain size of 30 μm or less and defining a plurality of interstitial regions;
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds or more; and
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 15 Gauss·cm 3 /grams or less;
a cemented carbide substrate; and
at least one transition layer disposed between and bonded to the cemented carbide substrate and the at least one polycrystalline diamond layer, the at least one transition layer exhibiting a coefficient of thermal expansion that is less than a coefficient of thermal expansion of the substrate and greater than a coefficient of thermal expansion of the at least one polycrystalline diamond layer.