Photovoltaic devices and method of making
View Patent ↗In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a transparent layer; a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer; a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer; and a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the patterned first semiconductor layer is substantially transparent. Method of making a photovoltaic device is also provided.
1. A photovoltaic device, comprising:
a transparent layer;
a first porous layer disposed on the transparent layer, wherein the first porous layer comprises a plurality of pores extending through a thickness of the first porous layer, wherein the first porous layer comprises a material selected from the group consisting of silicon oxide, titanium oxide, silicon nitride, and combinations thereof;
a first semiconductor material disposed in the plurality of pores to form a patterned first semiconductor layer, wherein the first semiconductor material comprises cadmium sulfide; and
a second semiconductor layer disposed on the first porous layer and the patterned first semiconductor layer, wherein the second semiconductor layer comprises cadmium telluride,
wherein the patterned first semiconductor layer is substantially transparent.
2. The photovoltaic device of claim 1 , wherein a thickness of the patterned first semiconductor layer is lower than or substantially the same as the thickness of the first porous layer.
3. The photovoltaic device of claim 1 , wherein an average diameter of the plurality of pores is greater than a thickness of the patterned first semiconductor layer.
4. The photovoltaic device of claim 1 , wherein the first porous layer has a first surface in contact with a second surface of the second semiconductor layer,
and the first porous layer has a second surface in contact with a first surface of the transparent layer.
5. The photovoltaic device of claim 1 , wherein the plurality of pores have an average diameter in a range less than about 1000 nanometers.
6. The photovoltaic device of claim 1 , wherein the first porous layer has a thickness in a range from about 50 nanometers to about 100 nanometers.
7. The photovoltaic device of claim 1 , wherein the patterned first semiconductor layer is compositionally graded across a thickness of the patterned first semiconductor layer.
8. The photovoltaic device of claim 1 , further comprising a second semiconductor material disposed in the plurality of pores, wherein the first semiconductor material and the second semiconductor material form a compositionally graded layer.
9. The photovoltaic device of claim 1 , further comprising a metal layer disposed on the second semiconductor layer.
10. The photovoltaic device of claim 9 , further comprising a p+-type semiconductor layer interposed between the metal layer and the second semiconductor layer.