Methods of temporally varying the laser intensity during scribing a photovoltaic device
View Patent ↗Methods for laser scribing a film stack including a plurality of thin film layers on a substrate are provided. A pulse of a laser beam is applied to the film stack, where the laser beam has a power that varies as a function of time during the pulse according to a predetermined power cycle. For example, the pulse can have a pulse lasting about 0.1 nanoseconds to about 500 nanoseconds. This pulse of the laser beam can be repeated across the film stack to form a scribe line through at least one of the thin film layers on the substrate. Such methods are particularly useful in laser scribing a cadmium telluride thin-film based photovoltaic device.
1. A method of laser scribing a film stack including a plurality of thin film layers on a substrate, comprising:
applying a pulse of a laser beam onto the film stack, wherein the laser beam has a power that varies as a function of time during the pulse to complete a predetermined power cycle, wherein the pulse lasts about 0.1 nanoseconds to about 500 nanoseconds; and,
repeating the pulse of the laser beam across the film stack to form a scribe line, wherein the power cycle has a power level that is adjusted to match properties of individual thin film layers and includes a first power level that is different than a second power level wherein the first power level is configured to scribe a first thin film layer, and wherein the second power level is configured to scribe an underlying second thin film layer.
2. The method as in claim 1 , wherein the power of the laser beam remains at the first power level for a first duration that is about 10% to about 90% of the pulse.
3. The method as in claim 2 , wherein the first duration is about 20% to about 75% of the pulse.
4. The method as in claim 2 , wherein the first duration is about 25% to about 50% of the pulse.
5. The method as in claim 2 , wherein the power of the laser beam remains at the second power level for a second duration that is shorter than the first duration, and wherein the first power level is less than the second power level.
6. The method as in claim 5 , wherein the second duration is about 0.5% to less than 50% of the pulse.
7. The method as in claim 5 , wherein the second duration is about 1% to about 25% of the pulse.
8. The method as in claim 2 , wherein the power cycle further defines a third power level that is different than both the first power level and the second power level, wherein the power of the laser beam remains at the third power level for a third duration that is about 0.001% to about 50% of the pulse.
9. The method as in claim 8 , wherein the power of the laser beam remains at the third power level for about 0.01% to about 25% of the pulse duration.
10. The method as in claim 8 , wherein the first power level is less than both the third power level and the second power level.
11. The method as in claim 10 , wherein the third power level is sequentially before the first power level in the power cycle of the pulse, and wherein the first power level is sequentially before the second power level in the power cycle of the pulse.
12. A method of laser scribing a cadmium telluride thin-film based photovoltaic device, the method comprising:
providing the cadmium telluride thin-film based photovoltaic device, wherein the cadmium telluride thin-film based photovoltaic device comprises a glass superstrate and a film stack, the film stack comprising a transparent conductive oxide layer over the glass superstrate, a resistive transparent buffer layer over the transparent conductive oxide layer, a cadmium sulfide layer over the resistive transparent buffer layer, and a cadmium telluride layer over the cadmium sulfide layer;
applying a pulse of a laser beam onto the film stack, wherein the laser beam has a power that varies as a function of time during the pulse according to a predetermined power cycle, wherein the pulse lasts about 0.1 nanoseconds to about 500 nanoseconds; and,
repeating the pulse of the laser beam across the cadmium telluride thin-film based photovoltaic device to form a scribe line in the film stack, wherein the power cycle defines a first power level that is different than a second power level wherein the first power level is configured to scribe a first thin film layer, and wherein the second power level is configured to scribe an underlying second thin film layer.
13. The method as in claim 12 , wherein the power of the laser beam remains at the first power level for a first duration that is about 10% to about 90% of the pulse.
14. The method as in claim 13 , wherein the first power level is sequentially before the second power level in the power cycle of the pulse.
15. The method as in claim 13 , wherein the power of the laser beam remains at the second power level for a second duration that is shorter than the first duration, and wherein the first power level is less than the second power level.
16. The method as in claim 13 , wherein the power cycle further defines a third power level that is different than both the first power level and the second power level, wherein the power of the laser beam remains at the third power level for a third duration that is about 0.5% to about 50% of the pulse.
17. The method as in claim 16 , wherein the power of the laser beam remains at the third power level for about 1% to about 25% of the pulse duration.
18. The method as in claim 16 , wherein the first power level is less than both the third power level and the second power level.
19. The method as in claim 18 , wherein the third power level is sequentially before the first power level in the power cycle of the pulse, and wherein the first power level is sequentially before the second power level in the power cycle of the pulse.