IP Library Granted Patent US 8,872,409
Granted Patent B2
US 8,872,409 · App. 13/091,167 · Granted Oct 28, 2014

Method for manufacturing composite piezoelectric substrate and piezoelectric device

Inventor: Takashi Iwamoto (Nagaokakyo, JP)
Assignee: Murata Manufacturing Co., Ltd.
H01L41/312H01L41/332H03H2003/023H03H3/02H03H9/174H03H9/02015H03H3/08H03H2003/021H03H9/173
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,872,409
App. No.
13/091,167
Granted
Oct 28, 2014
Kind
B2
Abstract

A piezoelectric device is manufactured in which the material of a supporting substrate can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate to form an ion-implanted portion. A temporary supporting substrate is formed on the ion-implanted surface of the piezoelectric substrate. The temporary supporting substrate includes a layer to be etched and a temporary substrate. The piezoelectric substrate is then heated to be divided at the ion-implanted portion to form a piezoelectric thin film. A supporting substrate is then formed on the piezoelectric thin film. The supporting substrate includes a dielectric film and a base substrate. The temporary supporting substrate is made of a material that produces a thermal stress at the interface between the temporary supporting substrate and the piezoelectric thin film less than the thermal stress at the interface between the supporting substrate and the piezoelectric thin film.

Claims (6)

1. A piezoelectric device comprising:

a piezoelectric thin film formed by dividing a piezoelectric substrate at a portion having a peak concentration of an ionized element implanted in the piezoelectric substrate, the piezoelectric thin film including a divided surface at which the piezoelectric thin film was divided from the piezoelectric substrate and a surface opposite to the divided surface;

a supporting substrate disposed on a side of the divided surface of the piezoelectric thin film; and

a functional electrode disposed on a side of the surface of the piezoelectric thin film opposite to the divided surface.

2. The piezoelectric device according to claim 1 , wherein the functional electrode is an interdigital transducer electrode.

3. The piezoelectric device according to claim 1 , wherein a support layer region and a cavity are disposed between the supporting substrate and the piezoelectric thin film, the support layer region enabling the piezoelectric thin film to be supported by the supporting substrate, the cavity being provided by removing a sacrificial layer region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 21, 2011
From: IWAMOTO, TAKASHI
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 026162/0402 →
Priority Claims (2)
JP 2010-112747 · May 17, 2010 · national
JP 2011-012768 · Jan 25, 2011 · national
Continuity (1)
Related Publication 20110278993A1 · Nov 17, 2011