PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME
A photoresist composition suitable for forming a high-resolution pattern, and a method of forming a photoresist pattern using the same. The photoresist composition includes about 10 to about 45 parts by weight of an alkali soluble binder resin including a hydroxyl group, about 0.1 to about 5 parts by weight of a photo-acid generator, about 1 to about 5 parts by weight of a cross-linker that cross-links the alkali-soluble binder resin including the hydroxyl group, about 0.3 to about 3 parts by weight of a quinone diazide compound, and a remainder of a solvent.
1 . A photoresist composition comprising:
about 10 to about 45 parts by weight of an alkali soluble binder resin including a hydroxyl group;
about 0.1 to about 5 parts by weight of a photo-acid generator;
about 1 to about 5 parts by weight of a cross-linker that cross-links the alkali-soluble binder resin including the hydroxyl group;
about 0.3 to about 3 parts by weight of a quinone diazide compound; and
a remainder of a solvent.
2 . The photoresist composition of claim 1 , wherein the alkali-soluble binder resin including the hydroxyl group is a novolac resin having a polystyrene-reduced weight average molecular weight in a range from about 1,000 to about 10,000.
3 . The photoresist composition of claim 2 , wherein the novolac resin is obtained by condensation of m-cresol and p-cresol as phenolic compounds mixed in a ratio of about 30:70 to about 70:30 by weight.
4 . The photoresist composition of claim 1 , wherein the photo-acid generator includes at least one selected from the group consisting of an aromatic sulfonic acid ester, an aromatic iodonium salt, an aromatic sulfonium salt, and an aromatic compound containing a halogenated alkyl remainder.
5 . The photoresist composition of claim 1 , wherein the cross-linker includes at least one selected from the group consisting of urea-formaldehyde, melamine-formaldehyde, benzoguanamine-formaldehyde, glycoluril-formaldehyde, and hexa(methoxymethyl)melamine.
6 . The photoresist composition of claim 1 , wherein the quinone diazide compound comprises at least one selected from the group consisting of 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4,4-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate.
7 . The photoresist composition of claim 1 , wherein the solvent comprises at least one selected from the group consisting of glycol ethers, glycol ethers, and diethylene glycols.
8 . The photoresist composition of claim 1 , further comprising at least one selected from the group consisting of a photosensitizer, a surfactant, and an adhesion promotion agent.
9 . The photoresist composition of claim 1 , wherein the photoresist composition is a negative-type photoresist composition.
10 . A method of forming a photoresist pattern comprising:
forming a photoresist film by coating a photoresist composition comprising about 10 to about 45 parts by weight of an alkali soluble binder resin including a hydroxyl group, about 0.1 to about 5 parts by weight of a photo-acid generator, about 1 to about 5 parts by weight of a cross-linker that cross-links the alkali-soluble binder resin including the hydroxyl group, about 0.3 to about 3 parts by weight of a quinone diazide compound, and a remainder of a solvent;
exposing the photoresist film to light; and
partially removing the photoresist film to form a photoresist pattern.
11 . The method of claim 10 , wherein the partially removing of the photoresist film comprises removing a non-exposed portion of the photoresist film.
12 . The method of claim 10 , wherein the alkali-soluble binder resin including a hydroxyl group is a novolac resin having a polystyrene-reduced weight average molecular weight in a range from about 1,000 to about 10,000.
13 . The method of claim 12 , wherein the novolac resin is obtained by condensation of m-cresol and p-cresol as phenolic compounds mixed in a ratio of about 30:70 to about 70:30 by weight.
14 . The method of claim 10 , wherein the photo-acid generator includes at least one selected from the group consisting of an aromatic sulfonic acid ester, an aromatic iodonium salt, an aromatic sulfonium salt, and an aromatic compound containing a halogenated alkyl remainder.
15 . The method of claim 10 , wherein the cross-linker includes at least one selected from the group consisting of urea-formaldehyde, melamine-formaldehyde, benzoguanamine-formaldehyde, glycoluril-formaldehyde, and hexa(methoxymethyl)melamine.
16 . The method of claim 10 , wherein the quinone diazide compound comprises at least one selected from the group consisting of 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4,4-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate.
17 . The method of claim 10 , wherein the solvent comprises at least one selected from the group consisting of glycol ethers, glycol ethers, and diethylene glycols.
18 . The method of claim 10 , further comprising at least one selected from the group consisting of a photosensitizer, a surfactant, and an adhesion promotion agent.
19 . The photoresist composition of claim 8 , wherein the photoresist composition includes an adhesion promotion agent in a range of about 0.0001 to about 2 parts by weight.
20 . A method for manufacturing a display device, comprising:
forming a gate line and a gate electrode on a first substrate;
forming a gate insulating layer on the first substrate and the gate electrode;
forming a semiconductor layer on the gate insulating layer;
forming a data line, a source electrode, and a drain electrode on the gate insulating layer and the semiconductor layer;
forming a color filter in a pixel area on the drain electrode and the gate insulating layer;
forming a black matrix made of opaque material overlapping an upper portion of a thin film transistor (TFT) having the gate electrode, the source electrode and the drain electrode as three terminals;
forming a passivation layer on the color filter and the black matrix;
forming a conductive film for forming a pixel electrode on the passivation layer;
forming a photoresist film by coating a photoresist composition comprising about 10 to about 45 parts by weight of an alkali soluble binder resin including a hydroxyl group, about 0.1 to about 5 parts by weight of a photo-acid generator, about 1 to about 5 parts by weight of a cross-linker that cross-links the alkali-soluble binder resin including the hydroxyl group, about 0.3 to about 3 parts by weight of a quinone diazide compound, and a remainder of a solvent;
exposing the photoresist film to light;
partially removing a portion of the photoresist film which is not exposed to light using a development solution to thereby form a photoresist pattern;
etching the conductive film for forming the pixel electrode using the formed photoresist pattern as an etch mask, thereby forming the pixel electrode; and
forming a second substrate including a common electrode on the pixel area of the first substrate.