Semiconductor transistor comprising two electrically conductive shield elements
View Patent ↗It is disclosed a semiconductor transistor, comprising a semiconductor substrate ( 111 ) in which a channel region ( 115 ) and a drain extension region ( 119 ) connected to the channel region are provided; a gate electrode ( 127 ) configured to provide an electric field for influencing the channel region; a first electrically conductive shield element ( 131 ) extending in a horizontal direction ( 103 ) parallel to a main surface of the semiconductor substrate and being arranged beside the gate electrode spaced apart from the drain extension region in a vertical direction ( 105 ) perpendicular to the horizontal direction; and a second electrically conductive shield element ( 133 ) arranged spaced apart from the first shield element in the vertical direction, wherein the gate electrode protrudes over the first shield element in the vertical direction.
1. A semiconductor transistor, comprising:
a semiconductor substrate having a channel region and a drain extension region connected to the channel region, and a main surface;
a gate electrode configured to provide an electric field for influencing the channel region;
a first electrically conductive shield element extending in a horizontal direction parallel to the main surface of the semiconductor substrate and being arranged beside the gate electrode spaced apart from the drain extension region in a vertical direction perpendicular to the horizontal direction; and
a second electrically conductive shield element arranged spaced apart from the first shield element in the vertical direction;
wherein at least a portion of the gate electrode protrudes over the first shield element in the vertical direction;
wherein the second shield element includes a lower horizontal portion of the second shield element extending in the horizontal direction, a vertical portion of the second shield element extending in the vertical direction, an end of the vertical portion being connected to the lower horizontal portion of the second shield element, and an upper horizontal portion of the second shield element extending in the horizontal direction and being connected to another end of the vertical portion of the second shield element;
wherein a portion of the upper horizontal portion of the second shield element protrudes in the horizontal direction over an side edge of the gate electrode closest to the first shield element;
wherein the portion of the upper horizontal portion of the second shield element protrudes in the horizontal direction over the side edge of the gate electrode closest to the first shield element by an amount between 0.1 and 0.8 times an extent of an upper surface of the gate electrode in the horizontal direction.
2. The semiconductor transistor according to claim 1 , wherein at least the portion of the gate electrode protrudes over the first shield element in the vertical direction by more than 1.1 times an extent of the first shield element in the vertical direction.
3. The semiconductor transistor according to claim 1 , wherein a distance between the first shield element and the gate electrode in the horizontal direction is smaller than 0.3 μm.
4. The semiconductor transistor according to claim 1 , wherein a distance between the first shield element and the drain extension region in the vertical direction is between 50 nm and 200 nm.
5. The semiconductor transistor according claim 1 , wherein a distance between an upper surface of the first shield element and a lower surface portion of the second shield element is between 200 nm and 500 nm.
6. The semiconductor transistor according to claim 1 ,
wherein a distance between an upper surface of the gate electrode and a lower surface of the upper horizontal portion of the second shield element is between 200 nm and 500 nm.
7. The semiconductor transistor according to claim 6 , wherein a distance between an edge of the first shield element closest to the gate electrode and an edge of the vertical portion of the second shield element closest to the gate electrode is between 200 nm and 500 nm.
8. The semiconductor transistor according to claim 1 , wherein the second shield element surrounds an upper surface of the gate electrode.
9. The semiconductor transistor according to claim 1 , wherein the second shield element comprises a stair case shield partly protruding in the horizontal direction over a side edge of the first shield element farthest from the gate electrode.
10. The semiconductor transistor according to claim 1 , further comprising a further first electrically conductive shield element extending in the horizontal direction and being arranged vertically between the first shield element and the second shield element, the further first electrically conductive shield element being spaced apart farther from the gate electrode than the first shield element.
11. The semiconductor transistor according to claim 1 , further comprising
a source region provided in the semiconductor substrate and connected to the channel region and
a source electrode connected to the source region,
wherein at least one of the first shield element and the second field element is connected to the source electrode.
12. The semiconductor transistor according to claim 1 , wherein the semiconductor substrate comprises at least one of Si, GaN, GaAs, AlGaN, SiC and AlN.
13. The semiconductor transistor according to claim 1 , further comprising an oxide layer arranged on the channel region and on the drain extension region and arranged below the gate electrode and below the first shield element.
14. The semiconductor transistor according to claim 13 , configured as LDMOS.
15. A semiconductor transistor, comprising:
a semiconductor substrate having a channel region and a drain extension region connected to the channel region, and a main surface;
a gate electrode configured to provide an electric field for influencing the channel region;
a first electrically conductive shield element extending in a horizontal direction parallel to the main surface of the semiconductor substrate and being arranged beside the gate electrode spaced apart from the drain extension region in a vertical direction perpendicular to the horizontal direction; and
a second electrically conductive shield element arranged spaced apart from the first shield element in the vertical direction;
wherein at least a portion of the gate electrode protrudes over the first shield element in the vertical direction;
wherein the second shield element includes a lower horizontal portion of the second shield element extending in the horizontal direction, a vertical portion of the second shield element extending in the vertical direction, an end of the vertical portion being connected to the lower horizontal portion of the second shield element, and an upper horizontal portion of the second shield element extending in the horizontal direction and being connected to another end of the vertical portion of the second shield element;
wherein a distance between an upper surface of the gate electrode and a lower surface of the upper horizontal portion of the second shield element is between 200 nm and 500 nm;
wherein a portion of the upper horizontal portion of the second shield element protrudes in the horizontal direction over a side edge of the gate electrode closest to the first shield element; and
wherein the portion of the upper horizontal portion of the second shield element protrudes in the horizontal direction over the side edge of the gate electrode closest to the first shield element by an amount between 0.1 and 0.8 times an extent of an upper surface of the gate electrode in the horizontal direction.