IP Library Granted Patent US 9,403,365
Granted Patent B2
US 9,403,365 · App. 13/097,549 · Granted Aug 2, 2016

Method for fabricating fluid ejection device

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Quick Facts
Patent No.
US 9,403,365
App. No.
13/097,549
Granted
Aug 2, 2016
Kind
B2
Abstract

A method for fabricating a fluid ejection device includes forming a drive circuitry layer on a substrate, fabricating at least one fluid ejection element on a top portion of the substrate, grinding the substrate from a bottom portion of the substrate up to a predetermined height, etching the top portion of the substrate to configure at least one slot within the top portion of the substrate, depositing a layer of an etch-stop material over the top portion of the substrate while filling the at least one slot with the etch-stop material, etching the bottom portion of the substrate to configure at least one fluid feed trench within the bottom portion of the substrate, removing the layer of the etch-stop material from the top portion of the substrate, and laminating a flow feature layer and a nozzle plate as a single unit over the top portion of the substrate.

Claims (13)

1. A method for fabricating a fluid ejection device, the method comprising:

forming a drive circuitry layer on a substrate;

fabricating at least one fluid ejection element on a top portion of the substrate, each fluid ejection element of the at least one fluid ejection element being electrically coupled to the drive circuitry layer;

grinding the substrate from a bottom portion of the substrate up to a predetermined height;

etching the top portion of the substrate to configure at least one slot within the top portion of the substrate;

depositing a layer of an etch-stop material over the top portion of the substrate while filling the at least one slot with the etch-stop material;

etching the bottom portion of the substrate to configure at least one fluid feed trench within the bottom portion of the substrate, wherein each fluid feed trench of the at least one fluid feed trench is in fluid communication with one or more slots of the at least one slot;

removing the layer of the etch-stop material from the top portion of the substrate; and

laminating a flow feature layer and a nozzle plate as a single unit over the top portion of the substrate having the at least one slot and the at least one fluid feed trench configured therewithin after all etching has been completed, wherein at least a portion of the flow feature layer is laminated in a plane defined by the nozzle plate.

2. The method of claim 1 , wherein the drive circuitry layer is formed by complementary metal-oxide-semiconductor implantation.

3. The method of claim 1 , wherein the top portion is etched by a deep reactive ion etching technique.

4. The method of claim 1 , wherein the flow feature layer comprises at least one flow feature, each flow feature of the at least one flow feature being in fluid communication with one or more corresponding slots of the at least one slot.

5. The method of claim 4 , wherein the nozzle plate comprises at least one nozzle, each nozzle of the at least one nozzle being in fluid communication with one or more corresponding flow features of the at least one flow feature.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 3, 2025
From: FUNAI ELECTRIC CO., LTD.
To: BRADY WORLDWIDE, INC.
Reel/Frame 070724/0277 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2013
From: LEXMARK INTERNATIONAL, INC.; LEXMARK INTERNATIONAL TECHNOLOGY, S.A.
To: FUNAI ELECTRIC CO., LTD
Reel/Frame 030416/0001 →