Light emtting device, method for manufacturing light emitting device, and light emitting apparatus
A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.
1. A method for fabricating a light emitting device, the method comprising:
forming a light emitting structure layer;
forming a protective layer on a first portion of the light emitting structure layer;
forming an ohmic contact layer on a second portion of the light emitting structure layer;
forming an adhesion layer including an oxide-based material on the ohmic contact layer, wherein a portion of the adhesion layer contacts a portion of the protective layer; and
forming a reflecting layer on the adhesion layer.
2. The method according to claim 1 , wherein the adhesion layer includes AZO (Al—ZnO) or IZO (In—ZnO).
3. The method according to claim 2 , wherein the AZO or IZO has a content of ZO (Zinc-Oxide) of about 50% to about 80%.
4. The method according to claim 1 , further comprising,
forming a conductive supporting substrate on the reflective layer;
performing an isolation etching to the light emitting structure layer along a boundary of a unit chip region; and
forming an electrode on the light emitting structure layer.
5. The method according to claim 4 , further comprising forming a seed layer for plating between the conductive supporting substrate and the reflecting layer.
6. The method according to claim 1 , wherein a lateral surface of the ohmic contact layer is surrounded by the protective layer.
7. The method according to claim 1 , wherein the protective layer includes at least one of SiO 2 , Si 3 N 4 , ITO, TiO 2 , AZO, and IZO.
8. The method according to claim 1 , wherein the reflecting layer includes at least one of Ag, Al, Ag—Pd—Cu, and Ag—Cu.
9. The method according to claim 1 , wherein the protective layer is formed at a peripheral region of the ohmic contact layer between the light emitting structure layer and the adhesion layer.
10. The method according to claim 1 , wherein the protective layer is partially overlapped with the light emitting structure layer.
11. The method according to claim 1 , wherein the protective layer includes at least one of a transparent conductive oxide film, Ti, Ni, Pt, Pd, Rh, Ir, and W.
12. The method according to claim 1 , further comprising forming a current blocking layer between the ohmic contact layer and the light emitting structure layer.
13. The method according to claim 1 , wherein the reflecting layer includes at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf.
14. The method according to claim 1 , wherein the ohmic contact layer includes at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, IrO, RuO, RuO/ITO, Ni, Ag, Ni/IrO/Au, and Ni/IrO/Au/ITO.
15. The method according to claim 1 , wherein the light emitting structure layer includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer.
16. The method according to claim 1 , wherein the adhesion layer is formed to contact the ohmic contact layer and the reflecting layer.
17. A method for fabricating a light emitting device, the method comprising:
forming a light emitting structure layer;
partially forming a conductive protective layer corresponding to a unit chip region on the light emitting structure layer;
forming an ohmic contact layer on the light emitting structure layer;
forming an adhesion layer including an oxide-based material on the ohmic contact layer and the conductive protective layer, wherein a portion of the adhesion layer contacts the conductive protective layer;
forming a reflecting layer on the adhesion layer;
forming a conductive supporting substrate on the reflecting layer;
performing an isolation etching to the light emitting structure layer along the unit chip region; and
forming an electrode on the light emitting structure layer.
18. The method according to claim 17 , wherein the adhesion layer includes AZO (Al—ZnO) or IZO (In—ZnO).
19. The method according to claim 18 , wherein the AZO or IZO has a content of ZO (Zinc-Oxide) of about 50% to about 80%.
20. The method according to claim 17 , further comprising forming a current blocking layer between the ohmic contact layer and the light emitting structure layer.