IP Library › Patent Application 13098964
Patent Application
App. No. 13/098,964

Method for Making Integrated Circuit Device Using Copper Metallization on 1-3 PZT Composite

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Quick Facts
Patent No.
US None
App. No.
13/098,964
Abstract

Provided herein is a method of making an integrated circuit device using copper metallization on 1-3 PZT composite. The method includes providing an overlay of electroplated immersion of gold (Au) to cover copper metal traces, the overlay preventing oxidation on 1:3 PZT composite with material. Also included is the formation of immersion Au nickel electrodes on the 1-3 PZT composite to achieve pad metallization for external connections.

Claims (4)

1 . A method of making an integrated circuit (IC) device using copper metallization on 1-3 PZT composite, comprising:

providing an overlay of electroplated immersion gold (Au) to cover copper metal traces, the providing preventing oxidation on the 1:3 PZT composite with material; and

forming an immersion of Au nickel electrodes on the 1-3 PZT composite to provide pad metallization for external connections of the IC.

2 . A method of claim 1 where the immersion gold (Au) is replaced by sputtered Nickel Vanadium (NiV).

Assignments (2)
SECURITY INTEREST Recorded May 19, 2022
From: SONAVATION, INC.
To: HEALTHCARE INVESTMENTS, LLC; LOCKE LORD LLP; BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM ON BEHALF OF THE UNIVERSITY OF TEXAS M.D. ANDERSON CANCER CENTER; SONINVEST LLC; WEINTZ, KARL F.
Reel/Frame 063271/0954 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 20, 2011
From: ALIYU, YAKUB; DIATEZUA, DEDA
To: SONAVATION, INC.
Reel/Frame 026480/0542 →